Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Woon-San Ko"'
Publikováno v:
Electronic Materials, Vol 5, Iss 2, Pp 71-79 (2024)
In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varyi
Externí odkaz:
https://doaj.org/article/7f1d2e2702db47329b8c91f4fd01f394
Publikováno v:
Nanomaterials, Vol 12, Iss 23, p 4342 (2022)
In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen permeation characteristics were analyzed according to the partial pressure
Externí odkaz:
https://doaj.org/article/a824335723864eb4af702a8561faba86
Publikováno v:
Sensors, Vol 22, Iss 22, p 8907 (2022)
In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. The NRs are formed on a planar channel of the TFT by hydrothermal synthesis for the mediators of pressure amplification. The fabricated dev
Externí odkaz:
https://doaj.org/article/8c197258a688469cb18366da9551adee
Publikováno v:
Micromachines, Vol 12, Iss 11, p 1401 (2021)
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of
Externí odkaz:
https://doaj.org/article/6f43c6382e7747d8b6ace45c84bd2542
Publikováno v:
Micromachines, Vol 12, Iss 11, p 1316 (2021)
In this study, the deuterium passivation effect of silicon nitride (Si3N4) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si3N4 as a charge trapping layer, deut
Externí odkaz:
https://doaj.org/article/9de899bdf1e04bddb3e48ab30e7ddd08
Autor:
Ki-Nam Kim, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Eun-Gi Kim, Eun-A Koo, So-Yeon Kwon, Ga-Won Lee
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c8e509416ed6f004486e5d67a861b0
https://doi.org/10.1109/edtm55494.2023.10102984
https://doi.org/10.1109/edtm55494.2023.10102984
Autor:
Woon-San Ko, Myeong Ho Song, Ki-Nam Kim, Jun-Ho Byun, Do-Yeon Lee, Eun-gi Kim, Eun-A Koo, So-Yeon Kwon, Geun-Ho Kim, Dong-Hyeuk Choi, Ga-Won Lee
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f27ec9f073783024804b3e0a5295b831
https://doi.org/10.1109/edtm55494.2023.10103094
https://doi.org/10.1109/edtm55494.2023.10103094
Autor:
Jun-Ho Byun, Woon-San Ko, Ki-Nam Kim, Do-Yeon Lee, Eun-Gi Kim, Eun-A Koo, So-Yeon Kwon, Ga-Won Lee
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bbbe8e64daa69c5ea0ba86432cca715
https://doi.org/10.1109/edtm55494.2023.10103040
https://doi.org/10.1109/edtm55494.2023.10103040
Publikováno v:
Micromachines
Micromachines, Vol 12, Iss 1316, p 1316 (2021)
Volume 12
Issue 11
Micromachines, Vol 12, Iss 1316, p 1316 (2021)
Volume 12
Issue 11
In this study, the deuterium passivation effect of silicon nitride (Si3N4) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si3N4 as a charge trapping layer, deut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4b44ab6ff86b0cd64fe4c9235fa2de6
https://pubmed.ncbi.nlm.nih.gov/34832728
https://pubmed.ncbi.nlm.nih.gov/34832728
Publikováno v:
Micromachines
Micromachines, Vol 12, Iss 1401, p 1401 (2021)
Volume 12
Issue 11
Micromachines, Vol 12, Iss 1401, p 1401 (2021)
Volume 12
Issue 11
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2caa5d98775201b5050825fed9a3225f
https://doi.org/10.3390/mi12111401
https://doi.org/10.3390/mi12111401