Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Woon Leng Loh"'
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Autor:
Ser Choong Chong, Ismael Cereno Daniel, Sharon Lim Pei Siang, Joseph Shim Cheng Yi, Alvin Lai Wai Song, Woon Leng Loh
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
Masaya Kawano, Xiang-Yu Wang, Qin Ren, Woon-Leng Loh, B. S. S. Chandra Rao, King-Jien Chui, Tsuyoshi Kawagoe, Ichiro Homma
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Publikováno v:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).
Publikováno v:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
The 3D stacked DRAM is an essential key module for high-performance computing systems. However, the cost increase due to 3D stacking limits its applications. The current 3D stacking technology requires front-side and backside microbumps, temporary bo
Autor:
King-Jien Chui, Woon Leng Loh
Publikováno v:
2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC).
This paper investigate the evolution of wafer warpage at different stages of a Through Si interposer (TSI) process flow, with reference to 2 different types of temporary bonding material. Comparison was done between solvent based and mechanical based
Publikováno v:
2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC).
Temporary bonding and de-bonding (TBDB) is one key technology in enabling the 2.5D/3D integration of semiconductor devices [1]. In this paper, we first evaluate two TBDB methods using different TBDB mechanism and corresponding adhesive materials, in
Autor:
Yao Zhu, Qin Ren, I-Ting Wang, Lin Ji, Woon Leng Loh, Zhixian Chen, King-Jien Chui, Xiangyu Wang, Fa Xing Che
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
This paper describes the concept and demonstration of a 2-tier MIMIM capacitor that can be placed around a TSV. By fabricating the metal-insulator-metal-insulator-metal (MIMIM) capacitor around the TSV, more than 30× increase in capacitance over a p
Autor:
Qin Ren, Woon Leng Loh
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
In this paper, Through Silicon Via (TSV) of Silicon on isolator (SOI) platform on via last wafer integration challenges were evaluated. TSV profile at Buried Oxide (BOX) and bulk Silicon of SOI substrates undercut improvement was assessed. Electropla