Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Wookyung Sun"'
Publikováno v:
IEEE Access, Vol 11, Pp 15909-15920 (2023)
In this study, we propose a deep neural network (DNN) model that extracts the subgap states in the channel layer of oxide thin-film transistors. We have developed a framework that includes creating a model training set, preprocessing the data, optimi
Externí odkaz:
https://doaj.org/article/6f4dabdb73d64cb29d1a6b2e0aa3c88b
Autor:
Dayoung Kim, Tae-Hyeon Kim, Yunyeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim, Hyungsoon Shin
Publikováno v:
IEEE Access, Vol 9, Pp 120901-120910 (2021)
In this paper, a physical unclonable function (PUF), a type of hardware security device, is proposed to overcome the limitations of existing security schemes. A $32\times 32$ crossbar array using TiOx/Al2O3- based memristors was fabricated, and elect
Externí odkaz:
https://doaj.org/article/4c52dcbcb2174f57ad004f6411cce2d9
Publikováno v:
Materials, Vol 16, Iss 1, p 182 (2022)
Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of
Externí odkaz:
https://doaj.org/article/2803dd8b2cb04e2c8e4791574c29b8fa
Publikováno v:
Journal of the Institute of Electronics and Information Engineers. 59:38-47
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c585633905a5214ab8581a1e09a07d
https://doi.org/10.5573/ieie.2022.59.12.38
https://doi.org/10.5573/ieie.2022.59.12.38
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1192-1196 (2018)
In this paper, the read margin (RM) and write power (WP) for various 3-D vertical resistive random-access memory (VRRAM) architectures and bias schemes are analyzed. The optimized bias scheme for each of the read and write operations is demonstrated
Externí odkaz:
https://doaj.org/article/dc1fe598f732437993aa5a2c8e2dfef0
Autor:
Wonhee Lee, Wookyung Sun
Publikováno v:
J-Institute. 7:32-46
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b167336b3f2937487f63d6db19f956
https://doi.org/10.22471/martialarts.2022.7.2.32
https://doi.org/10.22471/martialarts.2022.7.2.32
Publikováno v:
Micromachines, Vol 12, Iss 10, p 1209 (2021)
A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access memory (1T-1C-DRAM). Most studies on 1T-DRAM focus on device-level oper
Externí odkaz:
https://doaj.org/article/7880077ea0d84f2b98d7a06efb0e8598
Publikováno v:
Micromachines, Vol 11, Iss 11, p 952 (2020)
A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM)
Externí odkaz:
https://doaj.org/article/7338c06d56d143b59d7829eb7139f435
Publikováno v:
Applied Sciences, Vol 10, Iss 19, p 6692 (2020)
Because the development of the Internet of Things (IoT) requires technology that transfers information between objects without human intervention, the core of IoT security will be secure authentication between devices or between devices and servers.
Externí odkaz:
https://doaj.org/article/3757e38e8c564b039311a3d6e3baedf3
Publikováno v:
Micromachines, Vol 11, Iss 2, p 228 (2020)
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). P
Externí odkaz:
https://doaj.org/article/bf091c9032364f0488ed8263e34df201