Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Wook Jun Nam"'
Autor:
Terumi Okano, Alvin D. Compaan, Michael A. Pickering, Dohyoung Kwon, Victor V. Plotnikov, Zachary Gray, Deodatta V Shenai-Khatkhate, Stephen J. Fonash, Wook Jun Nam, Shawn Waggoner, John M. Stayancho
Publikováno v:
ECS Transactions. 66:275-279
A thin layer of a wide bandgap material disposed between an electrode and an absorber material in a photo-detector or solar cell can play important transport and optical roles in enhancing device performance. When the energy band edges of the materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc62b45b19d8c21d719a35b2bf588e13
https://doi.org/10.1149/06601.0275ecst
https://doi.org/10.1149/06601.0275ecst
Autor:
Liming Ji, Zachary Gray, Douglas Neidich, Nghia Nguyen, Stephen J. Fonash, Diego Fischer, Wook Jun Nam
Publikováno v:
IEEE Journal of Photovoltaics. 5:28-32
We fabricated nc-Si light trapping cells that produced photocurrents 30% higher than those of controls. Computer studies using experimentally determined, self-consistent TCO and nc-Si thicknesses showed this nanodome design is capable of producing $J
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43eafb02a8b833653dcc4ebdcf59ae7d
https://doi.org/10.1109/jphotov.2014.2363565
https://doi.org/10.1109/jphotov.2014.2363565
Autor:
Martin Foldyna, Stephen J. Fonash, Pere Roca i Cabarrocas, Mutaz Al-Ghzaiwat, Wook Jun Nam, Jean-Christophe Dornstetter
Publikováno v:
IEEE Journal of Photovoltaics
IEEE Journal of Photovoltaics, IEEE, 2017, 7 (4), pp.974-979. ⟨10.1109/JPHOTOV.2017.2703854⟩
IEEE Journal of Photovoltaics, IEEE, 2017, 7 (4), pp.974-979. ⟨10.1109/JPHOTOV.2017.2703854⟩
A top-surface, micron-scale, protrusion array following unique light management design criteria is presented and demonstrated. Modeling results for absorptance A ( λ ) and short-circuit current density J sc along with experimental results for extern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6290dc6a4daf97b3ec117e99e8be0e0
https://hal-polytechnique.archives-ouvertes.fr/hal-01640079
https://hal-polytechnique.archives-ouvertes.fr/hal-01640079
Publikováno v:
ECS Transactions. 64:3-8
A new fabrication approach for AMOSFETs (junctionless transistors) is demonstrated using a-Si:H and XeF2 as a sacrificial material and an etchant, respectively. The new approach, which provides advantages of our previous encapsulated and extruded Gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a55f9088bdb98430c36f86246dc7099
https://doi.org/10.1149/06410.0003ecst
https://doi.org/10.1149/06410.0003ecst
Publikováno v:
The Journal of Physical Chemistry B. 110:20197-20201
The multilayer desorption behavior of 2,5-diidothiophene and the dendritic aggregation of photochemical reaction products during the desorption of 2,5-diiodothiophene multilayers have been studied. Like many other aromatic compounds, 2,5-diiodothioph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66da4384742ec17907f3895b45d84a72
https://doi.org/10.1021/jp063363f
https://doi.org/10.1021/jp063363f
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1229-1233
Nano- and microchannels are fabricated using a novel deposited column/void network silicon film as a sacrificial material. This nanostructured silicon consists of nanometer-sized columns defined normal to the substrate in a void matrix, where the voi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56ed73998393fe3655a5f19301e19ef4
https://doi.org/10.1116/1.1365129
https://doi.org/10.1116/1.1365129
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:590-595
Effects of various cleaning and annealing methods on the removal of the residue and physical damage remaining on the exposed silicon surface after the oxide overetching by C4F8 magnetized inductively coupled plasmas were studied. X-ray photoelectron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec6284c653ebc07a7881ebecff57c833
https://doi.org/10.1116/1.580689
https://doi.org/10.1116/1.580689
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Lead selenide (PbSe) quantum dots (QDs) are investigated as the photovoltaic absorber material in a variety of designs based on the light and carrier collection management (LCCM) architecture (US Patent 8,294,025). This architecture uses a periodic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b635519a648f79ff082f6f8e815aee
https://doi.org/10.1109/pvsc.2013.6744505
https://doi.org/10.1109/pvsc.2013.6744505
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Design variations of our Light and Carrier Collection Management (LCCM) architecture were simulated for ultra-thin CIGS cells. Two back reflector materials (Au and Mo) were used. With a nominal CIGS thickness of 200nm, the Mo LCCM and Au LCCM cells p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::116bfaf178e2ed0cafdc4b2e490983d7
https://doi.org/10.1109/pvsc.2013.6744858
https://doi.org/10.1109/pvsc.2013.6744858
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
We present the profound performance enhancements experienced when an ultra-thin nanocrystalline silicon (nc-Si) film is utilized in our light and carrier collection management (LCCM) architecture (US Patent 8,294,025). We begin by establishing theore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b19d124c20950261cdf47b1cecdc1d46
https://doi.org/10.1109/pvsc.2013.6744227
https://doi.org/10.1109/pvsc.2013.6744227