Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Wook Byun"'
Autor:
Hee-Jae Lee, Geon-Hee Lee, Seung-Hwan Chung, Dong-Wook Byun, Michael A. Schweitz, Dae Hwan Chun, Nack Yong Joo, Minwho Lim, Tobias Erlbacher, Sang-Mo Koo
Publikováno v:
Micro, Vol 3, Iss 4, Pp 775-784 (2023)
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material. However, the thermal condu
Externí odkaz:
https://doaj.org/article/6cd7942e5e084d04a99e15c6c2957133
Autor:
Hyung-Jin Lee, Soo-Young Moon, Hee-Jae Lee, Dong-Wook Byun, Seung-Woo Jung, Michael A. Schweitz, Minkyung Kim, Jong-Min Oh, Weon Ho Shin, Chulhwan Park, Sang-Mo Koo
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 1579-1588 (2023)
In this study, we investigated the influence of post-deposition annealing (PDA) process on lithium phosphate (Li3PO4) solid-state thin films on silicon carbide (SiC) substrate in terms of materials and electrical properties. Li3PO4 thin films were d
Externí odkaz:
https://doaj.org/article/080690a9589249dc9a5388842fd122ec
Publikováno v:
IEEE Access, Vol 10, Pp 17134-17144 (2022)
Many applications are equipped to utilize drones to provide various services to users in Internet of Drones (IoD) environments. In such applications, it is necessary to make a session key between a drone and a user to establish an authenticated and s
Externí odkaz:
https://doaj.org/article/d0ef333783ce4bcda2ad5a67049b95aa
Publikováno v:
Materials Research Express, Vol 10, Iss 7, p 075902 (2023)
The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs). The characteristics of the Schottky contact are contingent on the properties o
Externí odkaz:
https://doaj.org/article/91305143f8744e0eaa4abfed36a985be
Autor:
Jin Wook Byun
Publikováno v:
IEEE Access, Vol 7, Pp 181165-181177 (2019)
In this paper, we study on how to construct an authenticated key exchange protocol in a device based authentication setting where an user who has a PUF-based device and its multi-factor authenticators desires to mutually authenticate a server. Genera
Externí odkaz:
https://doaj.org/article/829c32f1a4af4550934590985cc376d9
Autor:
Jin Wook Byun
Publikováno v:
IEEE Access, Vol 7, Pp 102951-102965 (2019)
We propose the first authenticated key exchange (AKE) protocol with different physical unclonable functions (PUFs). Our protocol allows for two end-users each holding a distinct PUF-embedded device and a long-term secret to agree to an authenticated
Externí odkaz:
https://doaj.org/article/e51afe5cd01b47b5b9aa205179e55ac6
Autor:
Minwho Lim, Constantin Csato, Julietta Förthner, Oleg Rusch, Kevin Ehrensberger, Barbara Kupfer, Susanne Beuer, Susanne Oertel, Dong Wook Byun, Seong Jun Kim, Sang Mo Koo, Hoon Kyu Shin, Tobias Erlbacher
Publikováno v:
Key Engineering Materials. 945:55-59
In this paper, the modeling of SJ-MOSFETs beyond the voltage class of 3.3 kV simulated with verified deep aluminum box-like shaped profiles by using TCAD simulation is described. The simulation results are used to investigate the influence of ion imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cff779c3fc690ce6b18b4dad110f89c
https://doi.org/10.4028/p-hyy2l9
https://doi.org/10.4028/p-hyy2l9
Autor:
Jin Wook Byun
Publikováno v:
The Journal of Supercomputing. 79:5684-5704
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88590d9b54162a3cb78955465d9894d9
https://doi.org/10.1007/s11227-022-04891-9
https://doi.org/10.1007/s11227-022-04891-9
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c597e5a6fc024389e7e4c1662b315c2f
https://doi.org/10.1109/essderc55479.2022.9947163
https://doi.org/10.1109/essderc55479.2022.9947163
Publikováno v:
Electronic Materials Letters. 17:479-484
s-Ga2O3/4H-SiC heterojunction diodes were fabricated by depositing β-Ga2O3 thin films on 4H-SiC substrates using radio frequency sputtering. X-ray diffraction (XRD) analysis revealed increased reflectivity of β-Ga2O3 ( $$\overline{4 }$$ 02), ( $$\o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65eda1415c44231e762d66ea7ca080ad
https://doi.org/10.1007/s13391-021-00297-6
https://doi.org/10.1007/s13391-021-00297-6