Zobrazeno 1 - 10
of 149
pro vyhledávání: '"Wook Bahng"'
Autor:
Young Jo Kim, Youngboo Moon, Jeong Hyun Moon, Hyoung Woo Kim, Wook Bahng, Hongsik Park, Young Jun Yoon, Jae Hwa Seo
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 3, Pp 100765- (2024)
In this study, we fabricated vertical Schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide (SiC), respectively, and conducted proton irradiation experiments to analyze the radiatio
Externí odkaz:
https://doaj.org/article/fe363854dced4a62a854bf4586c557be
Publikováno v:
Journal of the Korean Physical Society. 80:175-184
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 21:119-125
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:1904-1908
We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples,
Autor:
Jeong Hyun Moon, Sang Cheol Kim, Ogyun Seok, Wook Bahng, Nam-Kyun Kim, Moon Kyong Na, In Ho Kang, Hyoung Woo Kim
Publikováno v:
Transactions on Electrical and Electronic Materials. 22:115-120
This paper presents an overall optimization procedure and the electrical performances of 1.2 kV/10 A 4H-SiC junction barrier Schottky (JBS) diodes with high current density. To achieve high current density, the epi-layer, the design parameters for ac
Publikováno v:
Current Applied Physics. 20:1386-1390
The use of SiO2/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can be problematic due to high interface state density (Dit) and low field-effect mobility (μfe). Here, we present a tetra-ethyl-ortho-silicate (TEOS)-based low-pr
Publikováno v:
Materials Science Forum. 924:397-400
Nickel (Ni) is the most widely used metal for the formation of ohmic contact on n-type SiC. However, the irregular contact can potentially cause degradation in the device performance. To form the uniform ohmic interface, titanium (Ti) was applied as
Publikováno v:
ECS Transactions. 85:59-65
Publikováno v:
ECS Transactions. 85:75-87
Publikováno v:
Solid-State Electronics. 140:8-11
We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an ano