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of 10
pro vyhledávání: '"Woojoo Sim"'
Autor:
Heehwan Lee, Minjong Hong, Min Kang, Hyun Sung Park, Kyusu Ahn, Yongwoo Lee, Yongjo Kim, Woojoo Sim
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
Recent advances in machine learning and deep learning have provided an opportunity for improvement in the field of lithography. Compared with the numerical simulation, machine learning/deep learning may provide much faster and more efficient performa
Autor:
Woojoo Sim, Sooryong Lee, Ji-Suk Hong, Dingdong Yang, Honglak Lee, Kibok Lee, Jae-Seung Jeong
Publikováno v:
Optical Microlithography XXXII.
Deep learning has recently been successfully applied to lithography hotspot detection. However, automatic correction of the detected hotspots into non-hotspots has not been explored. This problem is challenging because the standard supervised learnin
Autor:
Jaemo Park, Woojoo Sim
Publikováno v:
Journal of the Korean Physical Society. 53:1232-1236
Autor:
Tom Cecil, Hyong-Euk Lee, M. J. Hong, Bob Gleason, Xin Zhou, Donghwan Son, David Irby, Guangming Xiao, Sooryong Lee, Sunhwa Jung, Sungsoo Suh, Woojoo Sim, Chris Ashton, David Kim, Lan Luan
Publikováno v:
SPIE Proceedings.
It is well known in the industry that the technology nodes from 30nm and below will require model based SRAF / OPC for critical layers to meet production required process windows. Since the seminal paper by Saleh and Sayegh[1][2] thirty years ago, th
Autor:
Tom Cecil, Chang-Jin Kang, Hyun-Jong Lee, Junghoon Ser, Christopher Ashton, David Kim, Xin Zhou, Guangming Xiao, Sung-Gon Jung, Donghwan Son, Seong-Woon Choi, Woojoo Sim, David Irby, Sungsoo Suh
Publikováno v:
SPIE Proceedings.
For low k1 lithography the resolution of critical patterns on large designs can require advanced resolution enhancement techniques for masks including scattering bars, complicated mask edge segmentation and placement, etc. Often only a portion of a l
Autor:
Donghwan Son, Tom Cecil, Sung-Gon Jung, Moon-Gyu Jeong, Sung-Woo Lee, Xin Zhou, Woojoo Sim, Robert E. Gleason, Junghoon Ser, Lan Luan, Seoung-woon Choi, David Kim
Publikováno v:
SPIE Proceedings.
For semiconductor IC manufacturing at sub-30nm and beyond, aggressive SRAFs are necessary to ensure sufficient process window and yield. Models used for full chip Inverse Lithography Technology (ILT) or OPC with aggressive SRAFs must predict both CDs
Publikováno v:
Journal of High Energy Physics. 2010
We consider the generalization of the heterotic action considered by Cherkis and Schwarz where the chiral bosons are introduced in a manifestly covariant way using an auxiliary field. In particular, we construct the kappa-symmetric heterotic action i
We study the quark number susceptibility in holographic QCD with a finite chemical potential or under an external magnetic field at finite temperature. We first consider the quark number susceptibility with the chemical potential. We observe that app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f411658cbbcc07ddf90834e03d160c2
Autor:
Jaemo Park, Woojoo Sim
We study the recursive relations for a quiver gauge theory with the gauge group $SU(N_1)\times SU(N_2)$ with bifundamental fermions transforming as $(N_1,\bar{N_2})$. We work out the recursive relation for the amplitudes involving a pair of quark and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0edcc5ed9711da8b7c187c00cceae3b
Autor:
Jaemo Park, Woojoo Sim
Publikováno v:
Journal of High Energy Physics. 2009:047-047
Generalizing the work by Cherkis and Schwarz [1], we carry out the double dimensional reduction of supersymmetric M5 brane on K3 to obtain the supersymmetric action of heterotic string in 7-dimensional flat space-time. Motivated by this result, we pr