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Autor:
Gun Rae Kim, Hyun-chul Sagong, Woo-kyum Lee, June-Kyun Park, Sang-woo Pae, Jong-woo Park, Byoung-deog Choi
Publikováno v:
ECS Meeting Abstracts. :836-836
Deuterium annealing has been widely used to help improve hot carrier injection (HCI) reliability of CMOS devices[1]. With introduction of high-k, and especially the gate-last metal gate processes, which decouples the high temperature annealing proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d4c96c37f0556f5f74bd6076283a83
https://doi.org/10.1149/ma2015-02/18/836
https://doi.org/10.1149/ma2015-02/18/836
