Zobrazeno 1 - 10
of 175
pro vyhledávání: '"Woo-Sung Han"'
Publikováno v:
Energies, Vol 17, Iss 10, p 2283 (2024)
This study proposes an anti-gravity 3D pulsating heat pipe (PHP) for cooling pouch batteries in electric vehicles. The 3D PHP envelops the battery cells and rapidly transfers heat generated from the batteries to the bottom cold plate. While the batte
Externí odkaz:
https://doaj.org/article/0a9e1589bb4b4ae89cfc647cb28c14b9
Autor:
Woo-Sung HAN1, Seok-Ho RHI1 rhi@chungbuk.ac.kr
Publikováno v:
Thermal Science. 2011, Vol. 15 Issue 1, p195-206. 12p. 2 Black and White Photographs, 2 Diagrams, 1 Chart, 9 Graphs.
Autor:
Edward T. Chang, Woo Sung Han
Korean American Pioneer Aviators: The Willows Airmen is the untold story of the brave Korean men who took to the skies more than twenty years before the Tuskegee Airmen fought in World War II. The tale of the Willows Aviation School connects Korean,
Autor:
Seok-Ho Rhi, Woo-Sung Han
Publikováno v:
Thermal Science. 15:195-206
In the present study, the specially designed grooved heat pipe charged with nanofluids was investigated in terms of various parameters such as heat transfer rate(50-300 W with 50 W interval), volume concentration(0.005%, 0.05%, 0.1%, and hybrid combi
Autor:
Jung-min Oh, Jeong Nam Han, Chang-ki Hong, Kun Tack Lee, Joo Tae Moon, Woo-Sung Han, Jin-Goo Park
Publikováno v:
Solid State Phenomena. :151-154
The present work reports a method to prevent the condensation defects on contact hole patterns by improving the rinsing process after a dry etching. In general, residual gases on the surface after the dry etching can be easily removed by using a DI w
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2337-2340
According to the 2007 international technology roadmap for semiconductors, the overlay budget of 60nm memory devices is 11.3nm. To meet such a tight requirement, each overlay error budget should be controlled carefully. It turns out that scanner cont
Autor:
Sang-Wook Kim, Sung-Soo Suh, Yong-Jin Chun, Young-Chang Kim, Suk-Joo Lee, Jung-Hyeon Lee, Sung-Woon Choi, Chang-Jin Kang, Woo-Sung Han, Joo-Tae Moon
Publikováno v:
Japanese Journal of Applied Physics. 47:4893-4897
In this paper, key process factors are computed during OPC for each fragment segments to perform a full-chip analysis of hot spot and removal of hot spot via process factor cost driven auto-correction or provide design guide for design for patterning
Publikováno v:
Japanese Journal of Applied Physics. 46:7684-7688
An analytic relationship of the mask mean-to-target (MTT) and the mask uniformity specifications affected by the mask proximity effect (MPE) is suggested. MPE mainly caused by e-beam proximity and the etch loading effect makes different MTTs for patt
Publikováno v:
Journal of Photopolymer Science and Technology. 16:463-466
In this study, we investigated the effect of surfactant-added rinse and soft bake on pattern collapse in ArF lithography. It was possible to obtain 21% narrower pattern with the aid of surfactant solution. Surfactant with low dynamic surface tension
Publikováno v:
Journal of Photopolymer Science and Technology. 16:499-505
The advent of 193 nm ArF lithography opened new era of sub-90 nm patterning in DRAM industry. ArF lithography in single layer scheme, however, has limitation in the substrate fabrication of sub-90 nm L/S due to the decreased physical thickness of res