Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Woo-Gun Jeong"'
Autor:
Dong-Heok Lee, Sang-Soo Choi, Jin-Han Song, Sang-Pil Yun, Jin-Woong Jeong, Woo-Gun Jeong, Kyu-Sik Kim
Publikováno v:
SPIE Proceedings.
In accordance with improvement of FPD technology, masks such as phase shift mask (PSM) and multi-tone mask (MTM) for a particular purpose also have been developed. Above all, the MTM consisted of more than tri-tone transmittance has a substantial adv
Autor:
Young Jin Yoon, Jin-Woong Jeong, Kyu-Sik Kim, Sang-Pil Yun, Ho-Jin Lee, Woo-Gun Jeong, Sung-Mo Jung, Jin-Han Song
Publikováno v:
SPIE Proceedings.
We evaluated and compared the i-line 5.2 % Cr based EAPSM and i-line 5.2 % MoSi based EAPSM to find more appropriate material of shifter for FPD. The evaluation items were their CD linearity, phase shift, and optical properties such as transmittance,
Autor:
Jong-Hwa Lee, Sung-Mo Jung, Seong-Min Seo, Min-Ki Choi, Kim Sei-Min, Woo-Gun Jeong, Kee-Soo Nam, Cheol Shin
Publikováno v:
SPIE Proceedings.
Multi-tone mask (MTM) consists of more than two layers having different transmittance modulation layers. A novel method is proposed to manufacture a MTM based on two kinds of transmittance modulation materials such as chromium and molybdenum. Differe
Autor:
Ik-Boum Hur, Sang-Soo Choi, Sung-Mo Jung, Woo-Gun Jeong, Cheol Shin, Jong Min Kim, Manish Patil, Moon-Hwan Choi
Publikováno v:
SPIE Proceedings.
ArF exposure tool have been implementing as a main work force of lithography. And haze generation by high actinic wavelength energy is big issue to be resolved. Many studies have been reported to remove or minimized ion residual on photomask surface
Autor:
Hyuk-Joo Kwon, Young-Woong Cho, Sang-Soo Choi, Se-Jong Choi, Jin-Min Kim, Woo-Gun Jeong, Dong-Il Park, Eui-Sang Park
Publikováno v:
SPIE Proceedings.
Cleaning is one of the most important processes in photomask manufacturing, because the smallest particles may be printable on wafers. Moreover, mask cleaning requirements are stricter than that for wafers because masks are the master image from whic
Autor:
Jong-Hwa Lee, Soon-Kyu Seo, Hyuk-Joo Kwon, Woo-Gun Jeong, Dong-Il Park, Eui-Sang Park, Sung-Mo Jung, Sang-Soo Choi, Jin-Min Kim
Publikováno v:
SPIE Proceedings.
As critical dimensions (CDs) continue to approach the 90 nm node, it is inevitable that the industry has employed the use of chemically amplified resist (CAR) with 50 kV e-beam writing tool. However, the fogging effect by re-scattered incident electr
Autor:
Hyuk-Joo Kwon, Soon-Kyu Seo, Dong-Il Park, Sung-Mo Jung, Woo-Gun Jeong, Sang-Soo Choi, Jin-Min Kim, Eui-Sang Park
Publikováno v:
SPIE Proceedings.
For the latest photomask fabrication, better critical dimension (CD) control and pattern fidelity to design size are required. According to the latest ITRS roadmap, masks for the 90 nm technology node should have CD uniformity of 6~8nm (3σ). Moreove
Autor:
Sung-Mo Jung, Hyuk-Joo Kwon, Eui-Sang Park, Sang-Soo Choi, Jin-Min Kim, Woo-Gun Jeong, Dong-Il Park, Soon-Kyu Seo, Jong-Hwa Lee
Publikováno v:
SPIE Proceedings.
As the requirement of specification on photomask continues to be tightening with advanced logic and memory devices, the combined process of chemically amplified resist (CAR) and high acceleration voltage e-beam writing tool is widely used to meet the
Autor:
Sang-Soo Choi, Soon Kyu Seo, Dong-Il Park, Soo-Hong Jeong, Jin-Min Kim, Jong-Hwa Lee, Eu Sang Park, Woo Gun Jeong
Publikováno v:
SPIE Proceedings.
For high-voltage vector e-beam writing systems, solving the resist heating effect problem is one of the highest priorities because it is a major factor affecting localized critical dimension (CD) uniformity. In order to write patterns for 90nm node d
Autor:
Jong-Hwa Lee, Eu-Sang Park, Jin-Min Kim, Soo-Hong Jeong, Soon-Kyu Seo, Dong-Il Park, Sang-Soo Choi, Woo-Gun Jeong
Publikováno v:
SPIE Proceedings.
Writing fogging effect in chemically amplified resist process makes critical effect on global CD distribution in the advanced 90nm node photomask with higher pattern density and smaller geometries. High contrast feature of chemically amplified resist