Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Woo-Chul Lee"'
Autor:
Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
Autor:
Seong Keun Kim, Dae-Myeong Geum, Hang-Kyu Kang, Soo Seok Kang, Do Kyung Hwang, Jae-Hoon Han, Seong Kwang Kim, Sanghyeon Kim, Woo Chul Lee, Yun-Heub Song, Jin Dong Song, Il-Pyo Roh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e770011f321351cc20af37b96e9f927
https://ieeexplore.ieee.org/document/9264257/
https://ieeexplore.ieee.org/document/9264257/
Autor:
Woo-Chul Lee, Ki-Choong Mah, Hang-Seok Lee, Gyo-Eun Lee, Young-Gab Jin, Bon-Yeop Koo, Hyun-Sung Leem, Jae Young Jang
Publikováno v:
The Korean Journal of Vision Science. 22:103-112
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d0c43488ef6f7e903f6d55940473b94
https://doi.org/10.17337/jmbi.2020.22.2.103
https://doi.org/10.17337/jmbi.2020.22.2.103
Autor:
Hang-Seok Lee, Jae Young Jang, Bon-Yeop Koo, Ki-Choong Mah, Kyo-Eun Lee, Hyun-Sung Leem, Yong-Gab Jin, Woo-Chul Lee, Moon-Soo Yoon, Jin-Tae Park
Publikováno v:
The Korean Journal of Vision Science. 20:579-588
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692583cab3aeaa9c55361c18aff40db4
https://doi.org/10.17337/jmbi.2018.20.4.579
https://doi.org/10.17337/jmbi.2018.20.4.579
Autor:
Seong Keun Kim, Woo Chul Lee, Jungwoo Oh, Weijie Wang, Eric S. Larsen, Jung Hwan Yum, Shahab Shervin, Jae-Hyun Ryou, Seung Min Lee, Christopher W. Bielawski
Publikováno v:
Journal of the American Ceramic Society. 102:3745-3752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d4c875d864f5db21aa3e06dfd884e6
https://doi.org/10.1111/jace.16198
https://doi.org/10.1111/jace.16198
Autor:
Seong Keun Kim, Woo Chul Lee, Dong-Hwan Jun, Suk-In Park, Cheol Seong Hwang, Cheol Jin Cho, Jin Dong Song
Publikováno v:
Current Applied Physics. 18:919-923
The presence of an AlN interfacial layer in high-k/In0.53Ga0.47As gate stacks improves the interfacial properties and enhances the electrical performance of devices. However, pure AlN is rarely grown by atomic layer deposition (ALD) because of the lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c80c58ff08ec0c007722440db4a7ba
https://doi.org/10.1016/j.cap.2018.04.020
https://doi.org/10.1016/j.cap.2018.04.020
Autor:
Woo Chul Lee, Cheol Jin Cho, Robert P. H. Chang, Seong Keun Kim, Cheol Seong Hwang, Woongkyu Lee
Publikováno v:
Journal of Materials Chemistry C. 6:13250-13256
Metallic MoO2 is proposed as a new oxide electrode for dynamic random-access memory (DRAM) capacitors. Although noble metal oxide electrodes including RuO2 and SrRuO3 have attracted interest as capacitor electrodes, these materials have critical inst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deeb5c46dadf24c450d84d478dfb42ce
https://doi.org/10.1039/c8tc04167a
https://doi.org/10.1039/c8tc04167a
Autor:
Eric S. Larsen, Seung Min Lee, Seong Keun Kim, Christopher W. Bielawski, Seonno Yoon, Jungwoo Oh, Weijie Wang, Jae-Hyun Ryou, Jung Hwan Yum, Shahab Shervin, Woo Chul Lee
Publikováno v:
ACS Applied Materials & Interfaces. 9:41973-41979
We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO2. As an e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73df5de58f16fd15b9e2cd21c5be56dd
https://doi.org/10.1021/acsami.7b13487
https://doi.org/10.1021/acsami.7b13487
Autor:
Cheol Jin Cho, Christopher W. Bielawski, Jung Hwan Yum, Woo Chul Lee, Seong Keun Kim, Sangtae Kim, Eric S. Larsen, Cheol Seong Hwang
Publikováno v:
The Journal of Physical Chemistry C. 121:17498-17504
Growth characteristics and properties of BeO films grown by atomic layer deposition (ALD) are investigated. ALD chemistries between dimethylberyllium and two different oxygen sources, H2O and O3, are governed by different reaction mechanisms, resulti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a84c4f1a1d669b1d2d4cce1487b21f63
https://doi.org/10.1021/acs.jpcc.7b05240
https://doi.org/10.1021/acs.jpcc.7b05240
Publikováno v:
Korean Journal of Family Practice. 7:342-347
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8c328a83c196c46afb4a2bcf976af0
https://doi.org/10.21215/kjfp.2017.7.3.342
https://doi.org/10.21215/kjfp.2017.7.3.342