Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Woo Bin Song"'
Autor:
Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin
Publikováno v:
Nature, vol 604, iss 7904
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental changein the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4fe30529e321261100d5a1d53aa55c9
https://doi.org/10.1038/s41586-022-04425-6
https://doi.org/10.1038/s41586-022-04425-6
Publikováno v:
Restorative Dentistry & Endodontics, Vol 38, Iss 3, Pp 146-153 (2013)
Objectives Aluminum step wedge (ASW) equivalent radiodensity (eRD) has been used to quantify restorative material's radiodensity. The aim of this study was to evaluate the effects of image acquisition control (IAC) of a digital X-ray system on the r
Externí odkaz:
https://doaj.org/article/b87c8d2c5ba1493ba2b3d1f3961d3e73
Autor:
Woo Bin Song, Min Jae Kim, Hyun Ji Yang, Jae Kyeong Jeong, Min Hoe Cho, Min Hee Cho, Hyeon Joo Seul
Publikováno v:
ACS Applied Materials & Interfaces. 12:33887-33898
Low-temperature (≤400 °C), stackable oxide semiconductors are promising as an upper transistor ingredient for monolithic three-dimensional integration. The atomic layer deposition (ALD) route provides a low-defect, high-quality semiconducting oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::337c15d103020a91548b6ea01b11cb49
https://doi.org/10.1021/acsami.0c06382
https://doi.org/10.1021/acsami.0c06382
Autor:
Cheng-Hsiang Hsu, Yoonsoo Rho, Steve Volkman, Brian Tyrrell, Suman Datta, Corey Stull, Zhan Zhang, Woo-Bin Song, Suraj Cheema, Jim Ciston, Padraic Shafer, Apurva Mehta, Won-Tae Koo, Chenming Hu, Gianni Pinelli, Jong-Ho Bae, Li-Chen Wang, Seung-Geol Nam, Matthew A. Cook, Dong Jin Jung, Jorge Gomez, Dominick Pipitone, Patrick Fay, Sayeef Salahuddin, John W. Freeland, Chung-Hsun Lin, Jinseong Heo, Kab-Jin Nam, Wenshen Li, Mohamed Mohamed, Nirmaan Shanker, Costas P. Grigoropoulos, Matthew San Jose, Ramamoorthy Ramesh, Vladimir Stoica, Ghazal Soheli, Christopher J. Tassone, Dong Ik Suh, David Thompson, Yu-Hung Liao, Ravi Rastogi, Shang-Lin Hsu, Daewoong Kwon
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to the adoption of high-κ diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f8aaa2e1c2c48a54ff1b9ae31d4a4b
https://doi.org/10.21203/rs.3.rs-413053/v1
https://doi.org/10.21203/rs.3.rs-413053/v1
Autor:
Suraj S, Cheema, Nirmaan, Shanker, Li-Chen, Wang, Cheng-Hsiang, Hsu, Shang-Lin, Hsu, Yu-Hung, Liao, Matthew, San Jose, Jorge, Gomez, Wriddhi, Chakraborty, Wenshen, Li, Jong-Ho, Bae, Steve K, Volkman, Daewoong, Kwon, Yoonsoo, Rho, Gianni, Pinelli, Ravi, Rastogi, Dominick, Pipitone, Corey, Stull, Matthew, Cook, Brian, Tyrrell, Vladimir A, Stoica, Zhan, Zhang, John W, Freeland, Christopher J, Tassone, Apurva, Mehta, Ghazal, Saheli, David, Thompson, Dong Ik, Suh, Won-Tae, Koo, Kab-Jin, Nam, Dong Jin, Jung, Woo-Bin, Song, Chung-Hsun, Lin, Seunggeol, Nam, Jinseong, Heo, Narendra, Parihar, Costas P, Grigoropoulos, Padraic, Shafer, Patrick, Fay, Ramamoorthy, Ramesh, Souvik, Mahapatra, Jim, Ciston, Suman, Datta, Mohamed, Mohamed, Chenming, Hu, Sayeef, Salahuddin
Publikováno v:
Nature. 604(7904)
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::77332fdd50103bf7aa4204de78c57539
https://pubmed.ncbi.nlm.nih.gov/35388197
https://pubmed.ncbi.nlm.nih.gov/35388197
Autor:
Seung Heon Shin, Do-Kwyn Kim, Dong-Suk Shin, Ji-Min Baek, Dae-Hyun Kim, Jung Ho Park, Seung Ryul Lee, Jung-taek Kim, Yihwan Kim, Jung-Hee Lee, Jieon Yoon, Sang-Moon Lee, Woo-Bin Song, Sun-jung Kim, Seung-Woo Son, Tae-Woo Kim
Publikováno v:
IEEE Electron Device Letters. 38:724-727
In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal–oxide–semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer. We have explored the impact of scaling down In0.53Ga0.47As channel thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef7cc8eb90f9eece3ecdc118190bb77
https://doi.org/10.1109/led.2017.2695652
https://doi.org/10.1109/led.2017.2695652
Autor:
Kristin De Meyer, Nadine Collaert, Daeyong Kim, Marc Schaekers, Naoto Horiguchi, Soon Aik Chew, Kathy Barla, Jean-Luc Everaert, Geoffrey Pourtois, Erik Rosseel, Steven Demuynck, Anda Mocuta, Keo Myoung Shin, Hao Yu, Anthony P Peter, Aaron Thean, Joon-Gon Lee, Woo-Bin Song
Publikováno v:
IEEE Transactions on Electron Devices. 63:4632-4641
In recent CMOS technology, extreme shrinking of contact area at source/drain regions raises serious concerns of high metal/semiconductor contact resistance. Confronting this problem, we introduce a precontact amorphization implantation plus Ti silici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c81e14ff974750aa0888fbe785337130
https://doi.org/10.1109/ted.2016.2616587
https://doi.org/10.1109/ted.2016.2616587
Publikováno v:
Restorative Dentistry & Endodontics
Restorative Dentistry & Endodontics, Vol 38, Iss 3, Pp 146-153 (2013)
Restorative Dentistry & Endodontics, Vol 38, Iss 3, Pp 146-153 (2013)
Objectives: Aluminum step wedge (ASW) equivalent radiodensity (eRD) has been used to quantify restorative material’s radiodensity. The aim of this study was to evaluate the effects of image acquisition control (IAC) of a digital X-ray system on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::250b9919abfd427c9c406543451d8b55
http://europepmc.org/articles/PMC3761123
http://europepmc.org/articles/PMC3761123
Autor:
Joseph J. Talghader, Woo Bin Song
Publikováno v:
Journal of Micromechanics and Microengineering. 16:1073-1079
We report the first practical results on design and characterization of adaptive microbolometers with a thermally tuned responsivity. Such devices are needed to simultaneously image scenes that contain objects at ambient and extremely hot temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c78f089cb782ac477658de6cfc8d4e
https://doi.org/10.1088/0960-1317/16/5/028
https://doi.org/10.1088/0960-1317/16/5/028
Autor:
Woo Bin Song, Joseph J. Talghader
Publikováno v:
Applied Physics Letters. 81:550-552
With the recent interest in adaptive IR imaging, focal plane arrays are desired that can operate linearly over an enormous dynamic range. Unfortunately, large signals can cause thermal detectors to operate at temperatures significantly above their am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfc379d00d3cf3ff8654a331bc15dde0
https://doi.org/10.1063/1.1493223
https://doi.org/10.1063/1.1493223