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pro vyhledávání: '"Wonwoo Suh"'
Autor:
Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, Seokje Lee, Wonwoo Suh, Jamin Lee, Miyoung Kim, Hong seok Oh, Gyu-Chul Yi
Publikováno v:
NPG Asia Materials, Vol 16, Iss 1, Pp 1-6 (2024)
Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used t
Externí odkaz:
https://doaj.org/article/de5cfb0c427f4764975eeae2ac0fd9b1
