Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Wontae Noh"'
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
We develop the atomic layer deposition (ALD) process of titanium silicate with halide-free precursor and evaluate film properties as a spacer for self-aligned double/quadruple patterning (SADP/SAQP). Growth characteristics are investigated depending
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b68b1359db0fd2de6e4d4b872b511c7
https://doi.org/10.1109/iitc51362.2021.9537517
https://doi.org/10.1109/iitc51362.2021.9537517
High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell
Autor:
Wontae Noh, Jae-Ho Choi, Sungje Lee, Seongkook Oh, Jihwan An, Byung Chan Yang, Jaehack Jeong, Jin-Geun Yu, Jeong Woo Shin
Publikováno v:
Ceramics International. 45:3811-3815
Cerium oxide (CeO2) shows superior surface exchange, and therefore is widely used for the cathode interlayer coating material to reduce the activation loss in low temperature solid oxide fuel cell (LT-SOFC). Here, we report on the application of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bee30d08af3316ad683d857908acbe4
https://doi.org/10.1016/j.ceramint.2018.11.050
https://doi.org/10.1016/j.ceramint.2018.11.050
Publikováno v:
Journal of Materials Science. 53:15237-15245
Enhancing the dielectric constant (k) of conventional gate dielectric materials such as HfO2 and ZrO2 is one of the important requirements for further scaling down of devices in future years. One promising approach for achieving this is to incorporat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::859edb6d769c9028730b10c4d81a487d
https://doi.org/10.1007/s10853-018-2695-4
https://doi.org/10.1007/s10853-018-2695-4
Publikováno v:
Materials Science in Semiconductor Processing. 63:279-284
Y2O3 thin films were grown by atomic layer deposition (ALD) through a heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor at 350 °C. The structural and chemical properties of both as-deposited and annealed Y2O3 films at 500 °C and 700 °C are analyzed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f488ac9f40db5a0474fe683d16749d2
https://doi.org/10.1016/j.mssp.2017.02.031
https://doi.org/10.1016/j.mssp.2017.02.031
Autor:
Wontae Noh, Tae Hyung Park, Satoko Gatineau, Jung Ho Yoon, Deok-Yong Cho, Sanjeev Gautam, Dae Eun Kwon, Cheol Seong Hwang, Sang Woon Lee, Seul Ji Song, Clement Lansalot-Matras, Han-Koo Lee, Kyung Jean Yoon
Publikováno v:
ACS Applied Materials & Interfaces. 9:537-547
The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f753a65e59e98d6104a64070f6c7c453
https://doi.org/10.1021/acsami.6b11613
https://doi.org/10.1021/acsami.6b11613
Autor:
Jamie Greer, Ono Takashi, Wontae Noh, Sunao Kamimura, Takashi Teramoto, Christian Dussarrat, Nicolas Blasco, Nicolas Gosset, Jooho Lee
Publikováno v:
Coatings, Vol 11, Iss 497, p 497 (2021)
Coatings
Volume 11
Issue 5
Coatings
Volume 11
Issue 5
The thermal atomic layer deposition (ThALD) of yttrium oxide (Y2O3) was developed using the newly designed, liquid precursor, Y(EtCp)2(iPr2-amd), as the yttrium source in combination with different oxygen sources, such as ozone, water and even molecu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49019217b974e847229a6953eb222197
https://doi.org/10.3390/coatings11050497
https://doi.org/10.3390/coatings11050497
Autor:
Mikko Kaipio, Jaakko Niinistö, Wontae Noh, Sanni Seppälä, Timothee Blanquart, Clement Lansalot-Matras, Mikko Ritala, Markku Leskelä, Jyrki Räisänen, Kenichiro Mizohata
Publikováno v:
Chemistry of Materials. 28:5440-5449
Thin films of rare-earth (RE) oxides (Y2O3, PrOx, Gd2O3, and Dy2O3) were deposited by atomic layer deposition from liquid heteroleptic RE(iPrCp)2(iPr-amd) precursors with either water or ozone as the oxygen source. Film thickness, crystallinity, morp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2759dfc49974ccd0b88c571257481e05
https://doi.org/10.1021/acs.chemmater.6b01869
https://doi.org/10.1021/acs.chemmater.6b01869
Autor:
Clement Lansalot-Matras, Wontae Noh, Il Kwon Oh, Gyeongho Lee, Young-Han Shin, Han-Bo-Ram Lee, Chang Wan Lee, Hyungjun Kim, Bo Eun Park
Publikováno v:
The Journal of Physical Chemistry C. 120:5958-5967
Atomic layer deposition (ALD) of HfO2 is a key technology for the application of high dielectric constant gate dielectrics ranging from conventional Si devices to novel nanodevices. The effects of the precursor on the growth characteristics and film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b18ffc384fe817e7fc50af4c4523f9
https://doi.org/10.1021/acs.jpcc.5b05286
https://doi.org/10.1021/acs.jpcc.5b05286
Autor:
Jaakko Niinistö, Sanni Seppälä, Jyrki Räisänen, Markku Leskelä, Kenichiro Mizohata, Mikko Ritala, Wontae Noh, Miika Mattinen
La2O3 thin films were deposited by atomic layer deposition from a liquid heteroleptic La precursor, La(iPrCp)2(iPr-amd), with either water, ozone, ethanol, or both water and ozone (separated by a purge) as the oxygen source. The effect of the oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b6625a31770e8e0a01b6600435c5e8e
http://hdl.handle.net/10138/238255
http://hdl.handle.net/10138/238255
Autor:
Chang Wan Lee, Hyungjun Kim, Kyung Yong Ko, Jae Min Myung, Kangsik Kim, Clement Lansalot-Matras, Han-Bo-Ram Lee, Il Kwon Oh, Wontae Noh, Christian Dussarrat, Su Jeong Lee, Zonghoon Lee
Publikováno v:
Chemistry of Materials. 27:148-156
Rare earth oxide (REO) atomic layer deposition (ALD) processes are investigated for hydrophobic coatings. Thermal and plasma-enhanced ALD (PE-ALD) Er2O3 and Dy2O3 are developed using the newly synthesized Er and Dy precursors bis-methylcyclopentadien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60339bf9212510c5700c9cdf053d81cf
https://doi.org/10.1021/cm503659d
https://doi.org/10.1021/cm503659d