Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Wonseop Choi"'
Publikováno v:
Journal of Materials Research. 20:1139-1145
To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic forc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39fe829140023fe21224820074ee53cb
https://doi.org/10.1557/jmr.2005.0176
https://doi.org/10.1557/jmr.2005.0176
Autor:
Wonseop Choi, Kyu-Se Choi, Zhan Chen, Seung-Mahn Lee, Rajiv K. Singh, G. Bahar Basim, Brij M. Moudgil
Publikováno v:
MRS Bulletin. 27:752-760
The formulation of slurries for chemical–mechanical planarization (CMP) is currently considered more of an art than a science, due to the lack of understanding of the wafer, slurry, and pad interactions involved. Several factors, including the larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::163aa4b060f8601a58257d166fdc38c9
https://doi.org/10.1557/mrs2002.245
https://doi.org/10.1557/mrs2002.245
Publikováno v:
MRS Proceedings. 816
Due to the ever-increasing popularity of STI in microelectronic device fabrication, designer slurries must be tailored to meet increasingly stringent planarity requirements. Although dielectric polishing is primarily mechanical in nature, the chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f02c7ed13b1c8506b7489b4e74a4b6
https://doi.org/10.1557/proc-816-k9.5
https://doi.org/10.1557/proc-816-k9.5
Publikováno v:
MRS Proceedings. 767
In chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and parti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dbc87ae134b4ff38ce0dd537caa8a96
https://doi.org/10.1557/proc-767-f1.10
https://doi.org/10.1557/proc-767-f1.10
Publikováno v:
MRS Proceedings. 767
Chronoamperometry was used to investigate the reaction/passivation kinetics and thickness of the chemically modified surface layer on the copper during chemical mechanical polishing (CMP). The result showed that the reaction/passivation kinetics and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6e4fd3a75d50ba3624b542bd3608fc
https://doi.org/10.1557/proc-767-f2.9
https://doi.org/10.1557/proc-767-f2.9
Publikováno v:
MRS Proceedings. 671
This paper reports on characterization of the surface coverage of particles by in-situ lateral friction force measurement during chemical mechanical polishing. The lateral friction force apparatus was made to operate close to real CMP conditions. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5e98fbd7a0806c754af48f5cc543318
https://doi.org/10.1557/proc-671-m5.1
https://doi.org/10.1557/proc-671-m5.1
Autor:
Brij M. Moudgil, Suresh B. Yeruva, Wonseop Choi, Jeremiah T. Abiade, Rajiv K. Singh, Dhananjay Kumar
Publikováno v:
Journal of The Electrochemical Society. 153:G1001
Shallow trench isolation (STI) allows tighter device packing and reduced chip area for isolation. STI is critically dependent on the global planarity that is only possible using chemical mechanical polishing (CMP). Ceria-based slurries are considered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b51841fb5ac9d544add47db595436d0f
https://doi.org/10.1149/1.2349357
https://doi.org/10.1149/1.2349357
Autor:
Rajiv K. Singh, Wonseop Choi
Publikováno v:
Japanese Journal of Applied Physics. 44:8383
Chemical mechanical polishing (CMP) is carried out using slurry particles in contact with a wafer and a pad. The size and distribution of particles between the wafer and the pad play a crucial role in achieving desired CMP performance. Polishing rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c03b94f29064d6fddeb255a155c932b3
https://doi.org/10.1143/jjap.44.8383
https://doi.org/10.1143/jjap.44.8383
Publikováno v:
Journal of The Electrochemical Society. 151:G185
The effects of alkaline ionic salts on silica chemical mechanical polishing ~CMP! have been studied. Particle size, zeta potential, and stability via turbidity tests have been characterized. Particle size and size distributions have been found to inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4055331ce3afb79c8dfcc8e329a9c3a
https://doi.org/10.1149/1.1644609
https://doi.org/10.1149/1.1644609
Publikováno v:
Journal of The Electrochemical Society. 151:G368
The surface coverage of particles between pad and wafer has been studied as a function of down load, particle size, and concentration in order to investigate oxide chemical mechanical polishing (CMP) mechanism. In situ friction force measurements hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5be1cd47010d20178311f017138721d
https://doi.org/10.1149/1.1690295
https://doi.org/10.1149/1.1690295