Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Wonseob Lim"'
Publikováno v:
Applied Sciences, Vol 14, Iss 8, p 3490 (2024)
In response to the increasing deployment of unmanned aerial vehicles (UAVs) across various sectors, the demand for efficient microwave power transmission (MPT) systems for UAVs has become paramount. This study introduces series-fed circularly polariz
Externí odkaz:
https://doaj.org/article/f5e8cd757bb84216b5587e601c507f7b
Autor:
Jeong-Min Woo, Wonseob Lim, Jongseok Bae, Chan Mi Song, Kyoung-Joo Lee, Sang-Hwa Yi, Youngoo Yang
Publikováno v:
IEEE Access, Vol 9, Pp 98348-98360 (2021)
In this study, a rectenna is adopted in a microwave-based wireless power transfer system to rectify the received radio frequency (RF) to DC power. Each rectenna comprises a DC-DC converter at the DC output port to ensure a stable power supply and a S
Externí odkaz:
https://doaj.org/article/4efdac1dd97047d6b05f018b3bc75420
Autor:
Jongseok Bae, Youngoo Yang, Sang-Hwa Yi, Chan Mi Song, Kyoung-Joo Lee, Wonseob Lim, Jeong Min Woo
Publikováno v:
IEEE Access, Vol 9, Pp 98348-98360 (2021)
In this study, a rectenna is adopted in a microwave-based wireless power transfer system to rectify the received radio frequency (RF) to DC power. Each rectenna comprises a DC-DC converter at the DC output port to ensure a stable power supply and a S
Autor:
Jangsup Yoon, Hyungmo Koo, Keum Cheol Hwang, Jongseok Bae, Hyunuk Kang, Wooseok Lee, Wonseob Lim, Kang-Yoon Lee, Youngoo Yang, Hwiseob Lee
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:5090-5100
This article presents a broadband two-stage cascode power amplifier integrated circuit (PAIC) using a 2- $\mu \text{m}$ InGaP/GaAs heterojunction bipolar transistor process. Since higher supply voltage of cascode power amplifier (PA) results in lower
Publikováno v:
IET Microwaves, Antennas & Propagation. 13:597-601
A dynamic supply switching (DSS) modulator using a single-inductor dual-output (SIDO) dc−dc converter for complimentary metal-oxide semiconductor (CMOS) radio frequency (RF) power amplifier (PA) integrated circuits is presented. The DSS modulator c
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 30:104-110
Autor:
Hyunuk Kang, Kang-Yoon Lee, Hansik Oh, Wooseok Lee, Youngoo Yang, Hyungmo Koo, Keum Cheol Hwang, Wonseob Lim, Hwiseob Lee, Cheon-Seok Park
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 66:583-593
This paper presents a broadband Doherty power amplifier (DPA) design with an octave bandwidth based on a new load network consisting of a quasi-lumped impedance transformer for the carrier amplifier, a multiple resonance circuit for the peaking ampli
Autor:
Youngoo Yang, Sungjae Oh, Cheon-Seok Park, Wonseob Lim, Keum Cheol Hwang, Hansik Oh, Hwiseob Lee, Taewan Kim, Kang-Yoon Lee
Publikováno v:
IEEE Microwave Magazine. 19:78-83
This article presents the design procedure and measurement results for a 4:1 wide-band transmission-line balun based on a combination of two different ferrite cores. The balun ranked first at the Student Design Competition for "Wide-Band Baluns" that
Autor:
Kang-Yoon Lee, Keum Cheol Hwang, Jaekyung Han, Hwiseob Lee, Wooseok Lee, Youngoo Yang, Hyunuk Kang, Wonseob Lim
Publikováno v:
IET Microwaves, Antennas & Propagation. 12:179-184
This study presents an X-band two-stage Doherty power amplifier (DPA) using pre-matched gallium-nitride high electron mobility transistors (GaN-HEMTs). The pre-matched GaN-HEMT includes partial matching circuits in the package using bond-wires and ca
Autor:
Wooseok Lee, Kang-Yoon Lee, Youngoo Yang, Hwiseob Lee, Jongseok Bae, Hyunuk Kang, Keum Cheol Hwang, Cheon-Seok Park, Wonseob Lim
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:5203-5211
This paper presents a fully integrated gallium-nitride high-electron-mobility transistor (GaN-HEMT) Doherty power amplifier (DPA) based on a compact load network for small-cell applications. The gate width of the transistor is optimized to have a loa