Zobrazeno 1 - 10
of 303
pro vyhledávání: '"Wong Yew Hoong"'
Publikováno v:
Sensors, Vol 14, Iss 8, Pp 14586-14600 (2014)
An inexpensive single-step carbon-assisted thermal evaporation method for the growth of SnO2-core/ZnO-shell nanostructures is described, and the ethanol sensing properties are presented. The structure and phases of the grown nanostructures are invest
Externí odkaz:
https://doaj.org/article/28f654a3b758426f8ce9f80214393d41
Autor:
Khan, Wajahat Ahmed a, Kazi, Salim Newaz b, ⁎, Chowdhury, Zaira Zaman a, ∗∗, Mohd Zubir, Mohd Nashrul b, Wong, Yew Hoong b, Shaikh, Kaleemullah b, Nawaz, Rab b, Hasnain, Samr Ul b
Publikováno v:
In Materials Science in Semiconductor Processing January 2025 185
Autor:
Wang, Puyi a, Chong, Wen Tong a, b, Wong, Yew Hoong a, c, ⁎, Tan, Yong Chou a, c, Cui, Tong d, Wu, Jinshun e
Publikováno v:
In Journal of Building Engineering 15 November 2024 97
Autor:
Khan, Wajahat Ahmed, Kazi, Salim Newaz, Chowdhury, Zaira Zaman, Mohd Zubir, Mohd Nashrul, Wong, Yew Hoong, Shaikh, Kaleemullah, Nawaz, Rab
Publikováno v:
In Solar Energy Materials and Solar Cells 1 October 2024 276
Autor:
Wong, Yung Cheng, Wong, Yew Hoong, Ang, Bee Chin, Haseeb, A.S.M.A., Tan, Chee-Keong, Ramesh, S., Ooi, Poh Choon, Dee, Chang Fu, E, Sharel Peisan, Jiwanti, Prastika Krisma
Publikováno v:
In Materials Today Communications August 2024 40
Autor:
Ng, Qian Qing, Tan, Chou Yong, Wong, Yew Hoong, Yap, Boon Kar, Yusof, Farazila B., Saher, Saim
Publikováno v:
In Microelectronics Reliability August 2024 159
Akademický článek
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Publikováno v:
In Heliyon 15 January 2024 10(1)
Autor:
Jiwanti, Prastika Krisma a, ∗, Sukardi, Dewi Kartika Azizah b, Sari, Anis Puspita b, Tomisaki, Mai c, Wafiroh, Siti b, Hartati, Sri d, Arramel d, Wong, Yew Hoong a, e, Woi, Pei Meng f, Juan, Joon Ching g
Publikováno v:
In Sensors International 2024 5
Autor:
Wong Yew Hoong, Cheong Kuan Yew
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 489 (2011)
Abstract The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Val
Externí odkaz:
https://doaj.org/article/e104a464d3384ac494f575befbda251c