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pro vyhledávání: '"Wong Jian Sang"'
Autor:
Tong Gee Hong, Wong Jian Sang, Michaelina Ong, Raymond Tan, Lesley Wong Ying Ying, Deb Kumar Pal, Ng Hong Seng
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
Gate oxide early breakdown was investigated. It was verified that the gate oxide quality is good and failure was due to extrinsic causes. The failure, which was localized at the edge of LOCOS was similar to Kooi effect. However, investigations showed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bd4dc81f829720c0cbf358ea19fb3c5
https://doi.org/10.1109/smelec.2012.6417214
https://doi.org/10.1109/smelec.2012.6417214
