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pro vyhledávání: '"Wong, Narumi Nagaya"'
Autor:
Shcherbakov-Wu, Wenbi, Saris, Seryio, Sheehan, Thomas, Wong, Narumi Nagaya, Powers, Eric R., Krieg, Franziska, Kovalenko, Maksym V., Willard, Adam P., Tisdale, William A.
In semiconductors, exciton or charge carrier diffusivity is typically described as an inherent material property. Here, we show that the transport of excitons (i.e., bound electron-hole pairs) in CsPbBr3 perovskite nanocrystals (NCs) depends markedly
Externí odkaz:
http://arxiv.org/abs/2209.14412
Akademický článek
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Autor:
Shcherbakov-Wu W; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA., Saris S; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.; Laboratory of Nanochemistry for Energy (LNCE), Institute of Chemical Sciences and Engineering (ISIC), École Polytechnique Fédérale de Lausanne, CH-1950 Sion, Switzerland., Sheehan TJ; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Wong NN; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Powers ER; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Krieg F; Department of Chemistry and Applied Bioscience, ETH Zürich, Zürich, Switzerland.; Laboratory for Thin Films and Photovoltaics and Laboratory for Transport at Nanoscale Interfaces, Empa - Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland., Kovalenko MV; Department of Chemistry and Applied Bioscience, ETH Zürich, Zürich, Switzerland.; Laboratory for Thin Films and Photovoltaics and Laboratory for Transport at Nanoscale Interfaces, Empa - Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland., Willard AP; Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, USA., Tisdale WA; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
Publikováno v:
Science advances [Sci Adv] 2024 Feb 23; Vol. 10 (8), pp. eadj2630. Date of Electronic Publication: 2024 Feb 21.