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pro vyhledávání: '"Wonchang Jeong"'
Autor:
Sungho Jang, E. S. Jung, Hyeongsun Hong, Seung-Uk Han, Satoru Yamada, Sungkweon Baek, Wonchang Jeong, Kijae Huh, Sung-Sam Lee, Junhee Lim, Gyo-Young Jin, Moonyoung Jeong, Kyu-Pil Lee
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
An analysis on the degradation of DRAM performance caused by the NBTI degradation of p-MOSFET is first to be reported. To improve the NBTI immunity, three candidates are examined. First, minimizing Si-H bonds at Si/SiON interface through controlling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf69b35ae8a07cbf9d40f0f8d2cfe34d
https://doi.org/10.1109/imw.2016.7495279
https://doi.org/10.1109/imw.2016.7495279
