Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Wonbaek Lee"'
Autor:
Hyungsik Park, Seungman Park, Byoungdeog Choi, Wonbaek Lee, Junsin Yi, Hyung-Wook Choi, Kyungsoo Jang, Hanwook Jung, Daeyoung Gong, Jongkyu Heo, Jaehyun Cho, Sungwook Jung
Publikováno v:
Microelectronics Reliability. 52:137-140
Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have a high carrier mobility that enables the design of small devices that offer large currents and fast switching speeds. However, the electrical characteristics of the conv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6437a809765ae33c59e749da498a76a5
https://doi.org/10.1016/j.microrel.2011.08.009
https://doi.org/10.1016/j.microrel.2011.08.009
Autor:
Nariangadu Lakshminarayan, Dang Ngoc Son, Wonbaek Lee, Junsin Yi, Nguyen Thanh Nga, Nguyen Van Duy, Sungwook Jung
Publikováno v:
Solid-State Electronics. 55:8-12
Effective memory performance of the nonvolatile memory/thin film transistor (NVM/TFT) devices needs good TFT characteristics. The reduction in leakage current of the TFT devices was accomplished with the gate offset (GOF) structure. A simplified fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c871d040abf92a385913638adf53cef6
https://doi.org/10.1016/j.sse.2010.09.010
https://doi.org/10.1016/j.sse.2010.09.010
Autor:
Hyung-Wook Choi, Wonbaek Lee, Jaehyun Cho, Doyoung Kim, Taeyoung Kwon, Hyungjun Kim, Youngkuk Kim, Daeyeong Gong, Hyeongsik Park, Kyungsoo Jang, Nguyen Van Duy, Junsin Yi, Seungman Park, Sungwook Jung
Publikováno v:
Thin Solid Films. 518:2808-2811
Al-doped ZnO (AZO) thin films have been prepared on the c-Si oriented direction of (100) and glass substrates, by radio frequency magnetron sputtering from ZnO–2 wt.% Al 2 O 3 ceramic targets. The effects of the working pressure on the optical and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::160b6a3a408264d1f55bef6ce948cccb
https://doi.org/10.1016/j.tsf.2009.08.036
https://doi.org/10.1016/j.tsf.2009.08.036
Publikováno v:
Japanese Journal of Applied Physics. 51:09MF01
In this study, p-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs) using an active layer of ultralarge-grain (ULG) silicon and multistack gate insulators of SiN x /SiO2 were fabricated and investigated. The ULG silicon thin films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::292d792623ea09facd4cb9b2ef80b16c
https://doi.org/10.1143/jjap.51.09mf01
https://doi.org/10.1143/jjap.51.09mf01
Autor:
Junsin Yi, Dang Ngoc Son, Kyunghyun Baek, Wonbaek Lee, Nguyen Van Duy, Hokyun Chung, Byoungdeog Choi, Kwang-Ryul Kim
Publikováno v:
Japanese Journal of Applied Physics. 50:024101
The degradation in device performance due to parasitic resistance along the source and drain electrodes is a serious problem in thin-film transistor fabrication. The effect of this series resistance on the field-effect mobility has been discussed and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::777a9d8bf3bf5c5e3140853b58b1728c
https://doi.org/10.7567/jjap.50.024101
https://doi.org/10.7567/jjap.50.024101
Autor:
Byoungdeog Choi, Kwang-Ryul Kim, Dang Ngoc Son, Sungwook Jung, Nguyen Van Duy, Nguyen Thanh Nga, Wonbaek Lee, Junsin Yi
Publikováno v:
Japanese Journal of Applied Physics. 49:096502
For a better thin film transistor performance, metal silicide has been studied in order to enhance the conductivity of the source and drain electrodes. Although aluminum does not form a metal silicide with silicon, the two materials interpenetrate in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c4a435cb64e5dd4fc1a9476e97b88d5
https://doi.org/10.1143/jjap.49.096502
https://doi.org/10.1143/jjap.49.096502
Publikováno v:
ECS Meeting Abstracts. :1132-1132
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5fe92456dbfcf1a415748f6f76cf3ac
https://doi.org/10.1149/ma2010-01/21/1132
https://doi.org/10.1149/ma2010-01/21/1132
Autor:
Jaehong Kim, Hyungsik Park, Sungwook Jung, Kwangyeol Kim, Youngkuk Kim, Junsin Yi, Daeyoung Gong, Kyungsoo Jang, Jinju Park, Byoungdeog Choi, Wonbaek Lee, Jaehyun Cho
Publikováno v:
Journal of The Electrochemical Society. 157:H182
Silicon dioxide (SiO 2 ) films were deposited using atmospheric pressure chemical vapor deposition (APCVD) with tetraethyl orthosilicate (TEOS) and ozone (O 3 ) as reactant gases. These films were used as the gate dielectric of low temperature polycr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9628afa046c3095c4d10023a1e94e289
https://doi.org/10.1149/1.3267039
https://doi.org/10.1149/1.3267039
Autor:
Jaehong Kim, Sungwook Jung, Kyungsoo Jang, Hyungsik Park, Jaehyun Cho, Wonbaek Lee, Daeyoung Gong, Byoungdeog Cho, Youngkuk Kim, Jinju Park, Kwangyeol Kim, Junsin Yi
Publikováno v:
Journal of The Electrochemical Society; 2010, Vol. 157 Issue 2, pH182-H185, 4p