Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Won-kyoung Choi"'
Autor:
Taewon Yoo, Seok Hyun Lee, Kyoung Lim Suk, Eung Kyu Kim, Won Kyoung Choi, Dae-Woo Kim, Dong Wook Kim
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
Jeon Gwangjae, Seok Hyun Lee, Ju-Il Choi, Won Kyoung Choi, Kyoung Lim Suk, Hyo Jin Yun, Sukhyun Jung, Jae Gwon Jang, Jongpa Hong, Dae-Woo Kim, Ju-Yeon Choi, Wonjae Lee, Min Jung Kim
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
Advances in the high performance computing (HPC) lead to a new frontier of the fan out wafer level packaging (FOWLP) development. To provide a solution of cost-attractive package for heterogeneous chip integration, FOWLP has recently emerged as an in
Autor:
Dae-Woo Kim, Dan Oh, Joo-yeon Choi, Gyoungbum Kim, Jae-gwon Jang, Jeong-Gi Jin, Park Jungho, Jin-woo Park, Kyoung-lim Suk, Won-kyoung Choi, Su-chang Lee, Jeon Gwangjae, Lee Seokhyun
Publikováno v:
2020 International Wafer Level Packaging Conference (IWLPC).
As faster data processing and communication gets more demanded for Data Center/Cloud, HPC (High Performance Computing), AI (Artificial Intelligence) accelerator and Network markets, HBM (High Bandwidth Memory) becomes main memory type to meet the req
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
In our previous studies, we have found that the over-molded structure FOWLP always shows the highest flexure strength. In the work of this paper, we would find out additional factors that affect the FOWLP strength. Two factors investigated are the si
Autor:
Masuda Seiya, Kotaro Okabe, Won Kyoung Choi, Caparas Jose Alvin, Kazuto Shimada, Mitsuru Sawano, Yu Iwai
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
The wafer thinning process and making backside redistribution layer (RDL) process were key technologies for assembling 2.5D and 3D IC the low profile device manufacturing. It was widely studied about temporary bonding material (TBM) for those advance
Autor:
Bernard Adams, Riko Radojcic, Andy Yong, Kyaw Oo Aung, Jae Sik Lee, Won Kyoung Choi, Urmi Ray, Seung Wook Yoon, Duk Ju Na
Publikováno v:
International Symposium on Microelectronics. 2015:000822-000826
The market for portable and mobile data access devices connected to a virtual cloud access point is exploding and driving increased functional convergence as well as increased packaging complexity and sophistication. This is creating unprecedented de
Autor:
Daejin Baek, Hong Seok Choi, Mohammed I. El-Gamal, Chang Hyun Oh, Won Kyoung Choi, Jun Hee Hong, Kihang Choi
Publikováno v:
Bulletin of the Korean Chemical Society. 33:2991-2998
A series of new diarylureas and diarylamides possessing 1,3,4-triarylpyrazole scaffold was synthesized and their in vitro antiproliferative activities against A375P human melanoma cell line and NCI-60 cell line panel were tested. Compounds 9, 11, 12,
Publikováno v:
European Journal of Medicinal Chemistry. 46:5754-5762
Synthesis of a new series of diarylureas and diarylamides possessing 1,3,4-triarylpyrazole scaffold is described. Their in vitro antiproliferative activities against 9 human melanoma cell lines were tested. Compounds 12, 13, 15, and 21-23 showed the
Publikováno v:
Journal of Electronic Materials. 40:2329-2336
Thermocompression bonding of through-layer copper interconnects is of great interest for fabrication of three-dimensional (3D) integrated circuits. We have investigated interactions of Cu films with noneutectic Sn-In at length scales of 1 μm to 5 μ
Autor:
C. S. Premachandran, Dim-Lee Kwong, Xiaowu Zhang, S. Gao, Siong Chiew Ong, Won Kyoung Choi, Yee Mong Khoo, Ranjan Rajoo, Ling Xie, Damaruganath Pinjala, Soon Wee Ho, C. S. Selvanayagam
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 1:510-518
Low-temperature bonds are thin intermetallic (IMC) bonds that are formed between devices when plated layers of different metals on each side of the component come into contact under relatively low temperature and high pressure. These joints, comprise