Zobrazeno 1 - 10
of 460
pro vyhledávání: '"Won-Ju Cho"'
Publikováno v:
Nanomaterials, Vol 14, Iss 15, p 1252 (2024)
This study demonstrates a significant enhancement in the performance of thin-film transistors (TFTs) in terms of stability and mobility by combining indium–tungsten oxide (IWO) and zinc oxide (ZnO). IWO/ZnO heterojunction structures were fabricated
Externí odkaz:
https://doaj.org/article/9726267ea43f42a0a7369f6f436c4677
Publikováno v:
Chemosensors, Vol 12, Iss 7, p 134 (2024)
To facilitate the utility of field effect transistor (FET)-type sensors, achieving sensitivity enhancement beyond the Nernst limit is crucial. Thus, this study proposed a novel approach for the development of ferroelectric FETs (FeFETs) using lead zi
Externí odkaz:
https://doaj.org/article/771c4140860949a89a8f3a59f7a376fc
Publikováno v:
Biomimetics, Vol 9, Iss 3, p 157 (2024)
Electrical double-layer (EDL) synaptic transistors based on organic materials exhibit low thermal and chemical stability and are thus incompatible with complementary metal oxide semiconductor (CMOS) processes involving high-temperature operations. Th
Externí odkaz:
https://doaj.org/article/770769df3f6a4f5bbf0f3ffb8d98d5af
Autor:
Yeong-Ung Kim, Won-Ju Cho
Publikováno v:
Biosensors, Vol 14, Iss 3, p 141 (2024)
Bovine serum albumin (BSA) is commonly incorporated in vaccines to improve stability. However, owing to potential allergic reactions in humans, the World Health Organization (WHO) mandates strict adherence to a BSA limit (≤50 ng/vaccine). BSA detec
Externí odkaz:
https://doaj.org/article/49f800710fa14537a39929ca9d20c68c
Autor:
Yeong-Ung Kim, Won-Ju Cho
Publikováno v:
Sensors, Vol 24, Iss 3, p 1017 (2024)
This study presents a novel pH sensor platform utilizing charge-trap-flash-type metal oxide semiconductor field-effect transistors (CTF-type MOSFETs) for enhanced sensitivity and self-amplification. Traditional ion-sensitive field-effect transistors
Externí odkaz:
https://doaj.org/article/b785236cbdba48c296d73b18062d390c
Publikováno v:
Nanomaterials, Vol 14, Iss 2, p 203 (2024)
This study proposes a phosphosilicate glass (PSG)-based electrolyte gate synaptic transistor with varying phosphorus (P) concentrations. A metal oxide semiconductor capacitor structure device was employed to measure the frequency-dependent (C-f) capa
Externí odkaz:
https://doaj.org/article/2fe46cd33d2a4d0a8106660650ab1da6
Publikováno v:
Gels, Vol 9, Iss 12, p 931 (2023)
In this study, a transparent and flexible synaptic transistor was fabricated based on a random-network nanowire (NW) channel made of indium gallium zinc oxide. This device employs a biocompatible chitosan-based hydrogel as an electrolytic gate dielec
Externí odkaz:
https://doaj.org/article/ae8c9a36afcd4e8997b9cf9bea4043f4
Publikováno v:
Biomimetics, Vol 8, Iss 7, p 532 (2023)
In this study, optoelectronic synaptic transistors based on indium–gallium–zinc oxide (IGZO) with a casein electrolyte-based electric double layer (EDL) were examined. The casein electrolyte played a crucial role in modulating synaptic plasticity
Externí odkaz:
https://doaj.org/article/4b5e927e952d4ffb9217bba326ed5768
Publikováno v:
Biomimetics, Vol 8, Iss 6, p 506 (2023)
This study aimed to propose a silicon-on-insulator (SOI)-based charge-trapping synaptic transistor with engineered tunnel barriers using high-k dielectrics for artificial synapse electronics capable of operating at high temperatures. The transistor e
Externí odkaz:
https://doaj.org/article/4b20df73147046f88d8cf7c8fd37ec71
Publikováno v:
Biomimetics, Vol 8, Iss 5, p 432 (2023)
In this study, we enhance the synaptic behavior of artificial synaptic transistors by utilizing nanowire (NW)-type polysilicon channel structures. The high surface-to-volume ratio of the NW channels enables efficient modulation of the channel conduct
Externí odkaz:
https://doaj.org/article/cf323ef6ba954ffa8b1aec9bfef2cdd9