Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Won-Ji Park"'
Autor:
So-Won Kim, Jae-Hoon Yoo, Won-Ji Park, Chan-Hee Lee, Joung-Ho Lee, Jong-Hwan Kim, Sae-Hoon Uhm, Hee-Chul Lee
Publikováno v:
Nanomaterials, Vol 14, Iss 20, p 1686 (2024)
We aimed to fabricate reliable memory devices using HfO2, which is gaining attention as a charge-trapping layer material for next-generation NAND flash memory. To this end, a new atomic layer deposition process using sequential remote plasma (RP) and
Externí odkaz:
https://doaj.org/article/a009560ee3c94ae9b861118dcb7fa76d
Autor:
Jae-Hoon Yoo, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm, Hee-Chul Lee
Publikováno v:
Nanomaterials, Vol 13, Iss 11, p 1785 (2023)
Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the cor
Externí odkaz:
https://doaj.org/article/ecb51cbfc56243eeb19deecf206f81ed
Autor:
Lee, Jae-Hoon Yoo, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm, Hee-Chul
Publikováno v:
Nanomaterials; Volume 13; Issue 11; Pages: 1785
Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the cor
Publikováno v:
Journal of the American Ceramic Society. 104:294-301
Autor:
Won Ji Park, Jae Hee Oh, Ji Hyung Kim, Seong Wook Moon, Jeong Hoon Ahn, Ding Shaofeng, Jung Ho Park, Won Hyoung Lee, Min Guk Kang, Choi Yun Ki, Seung Ki Nam, Je Gwan Hwang, Jong Mil Youn
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
Interposer to interconnect between the electronic components has been developed for the last few decades because it can improve the system performance effectively, compared to the system with intra-chip wiring. In this paper, the integrated stack cap
Publikováno v:
Journal of the American Ceramic Society. 102:4555-4561
Autor:
Joon Nyung Lee, Yuri Y. Masuoka, Jae Hee Oh, Jihyung Kim, Dongju Seo, Ding Shaofeng, Jeong Hoon Ahn, Won Ji Park, Sang-Deok Kwon, Haeri Yoo, Minguk Kang, Choi Yun Ki
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
The integration of a high aspect ratio Through Silicon Via (TSV) process with the EUV 7nm logic process was developed for the first time. The TSV and MOL to BEOL interface process was developed and the BEOL Via on TSV and MOL structure was evaluated.
Publikováno v:
Journal of Non-Crystalline Solids. 482:177-182
Effects of SnO addition on the optical properties of Pb1 − xSnxSe quantum dots (QDs) were investigated as a function of GeO2 content [GeO2] in germanosilicate glasses. Addition of SnO resulted in a red-shift of the absorption bands from QDs at [GeO
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
The first 3-D direct observation of clusters of Nd oxide inside silicate glasses was achieved using atom probe tomography. Three-dimensional elemental maps of major chemical elements in glasses such as Si, Al, Zn and O showed no evidence of regions t
Antisense RNA-based High-Throughput Screen System for Directed Evolution of Quorum Quenching Enzymes
Publikováno v:
ACS Chemical Biology. 10:2598-2605
Quorum quenching (QQ) enzymes, which disrupt the quorum sensing signaling process, have attracted considerable attention as new antimicrobial agents. However, their low catalytic efficiency for quorum sensing molecules remains a challenge. Herein, we