Zobrazeno 1 - 10 of 50 pro vyhledávání: '"Won-Ho Jang"'
1
Akademický článek
Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
Autor: Seong-In Cho, Won-Ho Jang, Ho-Young Cha, Hyungtak Kim
Publikováno v: Journal of Electromagnetic Engineering and Science, Vol 22, Iss 3, Pp 291-295 (2022)
In this work, we report hot carrier-induced degradation in normally-on AlGaN/GaN high electron mobility transistors (HEMTs) with a 0.25-μm gate. To analyze the hot carrier effect, the semi-on state stress test was carried out and the DC and pulsed I
Externí odkaz: https://doaj.org/article/22e6468f564e414d97ed8f361d151ec5
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2
Akademický článek
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
Autor: Tae-Hyeon Kim, Won-Ho Jang, Jun-Hyeok Yim, Ho-Young Cha
Publikováno v: Micromachines, Vol 12, Iss 3, p 291 (2021)
In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking devic
Externí odkaz: https://doaj.org/article/a18477310aaa4586b54a4aa4bce17eda
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7
P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process
Autor: Kwang-Seok Seo, Won-Ho Jang, Ho-Young Cha
Publikováno v: JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 20:485-490
An O₂ based selective GaN etching process was developed herein for use in p-GaN gated AlGaN/GaN heterojunction field-effect transistor fabrication, where precise control of the p-GaN etching was an important process step that determined the device
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be52f779c1e6578486caa2df7acde514
https://doi.org/10.5573/jsts.2020.20.6.485
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