Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Won-Hee Jeong"'
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020)
Abstract A sneak path current—a current passing through a neighboring memory cell—is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the se
Externí odkaz:
https://doaj.org/article/db1bb568f6ac4b74ab454eda779c89e9
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 22:387-394
Autor:
Yong Kim, Won Hee Jeong, Son Bao Tran, Hyo Cheon Woo, Jihun Kim, Cheol Seong Hwang, Kyeong-Sik Min, Byung Joon Choi
Publikováno v:
AIP Advances, Vol 9, Iss 4, Pp 045131-045131-5 (2019)
Memristor crossbar arrays were fabricated based on a Ti/HfO2/Ti stack that exhibited electroforming-free behavior and low device variability in a 10 x 10 array size. The binary states of high-resistance-state and low-resistance-state in the bipolar m
Externí odkaz:
https://doaj.org/article/9035c381e4b5466d8e2989b897a05d28
Autor:
Yi, Jin Woo, Lee, Wonoh, Seong, Dong Gi, Won, Hee Jeong, Kim, Sang Woo, Um, Moon Kwang, Byun, Joon-Hyung
Publikováno v:
In Composites Part A August 2016 87:212-219
Publikováno v:
Crisis and Emergency Management: Theory and Praxis. 14:19-37
대형재난은 사람들에게 어떤 변화를 가져오는지, 그러한 변화가 지역과 주변환경에는 어떠한 영향 을 줄 수 있는지에 대해 궁금증을 가지고 연구를 수행하였다. 특히 경험, 감정, 신념과 같
Publikováno v:
Nanoscale Research Letters
A sneak path current—a current passing through a neighboring memory cell—is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the selector de
Publikováno v:
Advanced Electronic Materials. 7:2170017
Publikováno v:
Advanced Electronic Materials. 7:2100050
Autor:
Won Hee Jeong, In Seok Seo
Publikováno v:
Crisis and Emergency Management. 12:115-132
This study was performed to predict the policy effects of the Fundamental Law on Climate Change (the legal and institutional reforms) on climate...
Autor:
Ji Hun Kim, Cheol Seong Hwang, Won Hee Jeong, Yong Kim, Son Bao Tran, Hyo Cheon Woo, Byung Joon Choi, Kyeong-Sik Min
Publikováno v:
AIP Advances, Vol 9, Iss 4, Pp 045131-045131-5 (2019)
Memristor crossbar arrays were fabricated based on a Ti/HfO2/Ti stack that exhibited electroforming-free behavior and low device variability in a 10 x 10 array size. The binary states of high-resistance-state and low-resistance-state in the bipolar m