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pro vyhledávání: '"Won-Gu Kang Kang"'
Publikováno v:
ETRI Journal. 17:1-12
A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1595ac2510b68c23f59615541e74127a
https://doi.org/10.4218/etrij.96.0196.0041
https://doi.org/10.4218/etrij.96.0196.0041
