Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Won Seong Lee"'
Publikováno v:
The Korean Journal of Blood Transfusion. 26:159-173
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e240545a9850451aad19ad6bea34bc3d
https://doi.org/10.17945/kjbt.2015.26.2.159
https://doi.org/10.17945/kjbt.2015.26.2.159
Autor:
이원승 ( Won Seong Lee )
Publikováno v:
Review of Korean Military Studies. 3:95-136
The purpose of this study was to find out the successful factors of the policy of military robot by analyzing the cases of the US and the ROK using the comparative historical analysis from the perspective of historical institutionalism. Additionally,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be6ae14c241b9c4579a6257e1cd7954a
https://doi.org/10.34166/rokms.2014.3.2.95
https://doi.org/10.34166/rokms.2014.3.2.95
Autor:
Changwook Jeong, Anh-Tuan Pham, Sae-jin Kim, Jongchol Kim, Uihui Kwon, S. Dhar, H. W. Kim, Hyeon-Kyun Noh, S. Maeda, Won-Seong Lee, Seonghoon Jin, Woosung Choi, Krishna Kumar Bhuwalka, Zhenhua Wu, Kwangseok Lee
Publikováno v:
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The feasibility of medium-high fraction SiGe based FinFET pMOS devices for a sub-10nm CMOS logic technology from a performance (I EFF @ fixed I OFF ) standpoint is evaluated, considering three key device aspects — stress, band-to-band-tunneling (BT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d37575d95c4d6f75612b307cd6aa89b
https://doi.org/10.1109/sispad.2016.7605217
https://doi.org/10.1109/sispad.2016.7605217
Autor:
Jin-Joo Kim, Il-Han Park, Byung-Gook Park, Jun Su Kim, Daewoong Kang, Won-Seong Lee, Hyungcheol Shin, Dong-Won Chang, Hyukje Kwon, Kyongjoo Lee, Sungnam Jang, Jong Duk Lee, Jaehong Lee
Publikováno v:
Japanese Journal of Applied Physics. 47:2676-2679
We introduced the self aligned floating poly (SAP) process using the SiN liner at active edge to improve the cell characteristics of high density NAND flash memory devices. Capacitance and electric field at corner of active edge are related to on cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661ce267bf4a0ae338b222bbee07c501
https://doi.org/10.1143/jjap.47.2676
https://doi.org/10.1143/jjap.47.2676
Autor:
Jong Duk Lee, Young-Wug Kim, Jae Sung Sim, Won Seong Lee, Sung In Hong, Seung-Woo Lee, Man-Sug Kang, Kwang-Pyuk Suh, Byung-Gook Park, In-Ho Nam
Publikováno v:
IEEE Transactions on Electron Devices. 48:2310-2316
Nitrogen implantation on the silicon substrate was performed before the gate oxidation at a fixed energy of 30 keV and with the split dose of 1.0/spl times/10/sup 14//cm/sup 2/ and 2.0/spl times/10/sup 14//cm/sup 2/. Initial O/sub 2/ injection method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::437dc283452c346e84539b27d9420498
https://doi.org/10.1109/16.954470
https://doi.org/10.1109/16.954470
Autor:
Dongmok Whang, Sungwoo Hwang, Jae-Sung Rieh, Byoung Hak Hong, Won-Seong Lee, Dong-Won Kim, Kyoung Hwan Yeo, Young Chai Jung, Sang-Hun Song, Luryi Choi, Gyo Young Jin, Kyung Seok Oh, Keun Hwi Cho
Publikováno v:
IEEE Electron Device Letters. 30:665-667
The mobility-degradation factor and the series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors are extracted using the same mobility-degradation model as in the case of planar MOSFETs. The extraction is done by def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac4d86b4e4e2ec748ba7fbd409ec76a
https://doi.org/10.1109/led.2009.2019977
https://doi.org/10.1109/led.2009.2019977
Publikováno v:
IEEE Electron Device Letters. 30:155-157
We present our study on the dependence of data retention characteristics on the threshold voltage (V TH) of the cell transistor revealing the combined effect of control gate voltage and cell transistor architecture. Data retention characteristics are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c7d14f870dd06c174119785fcf9ace
https://doi.org/10.1109/led.2008.2009006
https://doi.org/10.1109/led.2008.2009006
Publikováno v:
IEEE Electron Device Letters. 29:1050-1052
We present our study on the effect of field oxide recess on cell-programming-speed uniformity of nand flash cell memory. Due to the short distance between the control gate and the shallow-trench-isolation (STI) edge, the control-gate voltage generate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4702fce1ff0c43589c2b9c138fc30926
https://doi.org/10.1109/led.2008.2001797
https://doi.org/10.1109/led.2008.2001797
Autor:
Donggun Park, Sung Dae Suk, Ming Li, Yun Young Yeoh, Kyoung Hwan Yeo, Sungwoo Hwang, Dong-Won Kim, Keun Hwi Cho, Byung Hak Hong, Young Chai Jung, Won-Seong Lee
Publikováno v:
IEEE Electron Device Letters. 28:1129-1131
The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures T ranging from 4 to 300 K. The dependence of the off-current suggests that thermal generation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba4dadf6291b6be8491766c0bf9f52ff
https://doi.org/10.1109/led.2007.909868
https://doi.org/10.1109/led.2007.909868
Autor:
Won-Seong Lee
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
The presentation will discuss the future memory technologies beyond the 30 nm node, especially for DRAM, NAND Flash, new memories such as Phase change RAM (PRAM), and ferroelectric RAM (FRAM), and novel device structure technologies, which include ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::196576a350c042bce88d532df2cf74d4
https://doi.org/10.1109/icsict.2008.4735112
https://doi.org/10.1109/icsict.2008.4735112