Zobrazeno 1 - 10
of 175
pro vyhledávání: '"Won Seok, Han"'
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-7 (2022)
Abstract GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550 °C low-temperature (LT)-DFL and 660 °C high-temperature (HT)-DFL using metal organic vapor-phase epitaxy and the effects of the growth temperature w
Externí odkaz:
https://doaj.org/article/925b2d281e2545b2bd7d0cc383050f31
Autor:
HoSung Kim, Tae‐Soo Kim, Shinmo An, Duk‐Jun Kim, Kap Joong Kim, Young‐Ho Ko, Joon Tae Ahn, Won Seok Han
Publikováno v:
ETRI Journal, Vol 43, Iss 5, Pp 909-915 (2021)
AbstractGaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer‐scale characteristics. The surface
Externí odkaz:
https://doaj.org/article/72be7bba276049bc8c75f5612473a943
Autor:
Seung-Hyun Kim, Won Seok Han, Tae-Young Jeong, Hyang-Rok Lee, H. Jeong, D. Lee, Seung-Bo Shim, Dai-Sik Kim, Kwang Jun Ahn, Ki-Ju Yee
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Abstract We report surface plasmon (SP) lasing in metal/semiconductor nanostructures, where one-dimensional periodic silver slit gratings are placed on top of an InGaAsP layer. The SP nature of the lasing is confirmed from the emission wavelength gov
Externí odkaz:
https://doaj.org/article/3b66495388f14f039f1b9d8c2a129ca3
Autor:
Joon Tae Ahn, Shinmo An, Ho Sung Kim, Young-Ho Ko, Duk-Jun Kim, Won Seok Han, Kap-Joong Kim, Tae-Soo Kim
Publikováno v:
ETRI Journal, Vol 43, Iss 5, Pp 909-915 (2021)
GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer‐scale characteristics. The surface morpholo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ab1eb9c9ac5e4cc79bacc5689aa4571
https://doi.org/10.4218/etrij.2021-0003
https://doi.org/10.4218/etrij.2021-0003
Autor:
Honghwi Park, Heungsup Won, Changhee Lim, Yuxuan Zhang, Won Seok Han, Sung-Bum Bae, Chang-Ju Lee, Yeho Noh, Junyeong Lee, Jonghyung Lee, Sunghwan Jung, Muhan Choi, Sunghwan Lee, Hongsik Park
Publikováno v:
Science Advances
Layer-release techniques for producing freestanding III-V epitaxial layers have been actively developed for heterointegration of single-crystalline compound semiconductors with Si platforms. However, for the release of target epitaxial layers from II
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75861d1003442ebe63731ea3bf0b2196
https://doi.org/10.1126/sciadv.abl6406
https://doi.org/10.1126/sciadv.abl6406
Publikováno v:
Next-Generation Optical Communication: Components, Sub-Systems, and Systems IX.
We present optimized structure of waveguide photodetector (WGPD) having large responsivity in spite that its absorption layer is thin. Through beam-propagation method simulations, spot-size converter integrated WGPD is found to be able to have larger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7583c57f16335b012076200bc17a8dd5
https://doi.org/10.1117/12.2543023
https://doi.org/10.1117/12.2543023
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:1753-1757
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e94e88ddcc8ad72aa9b58b443793ed64
https://doi.org/10.1166/jno.2018.2400
https://doi.org/10.1166/jno.2018.2400
Publikováno v:
Applied Science and Convergence Technology. 27:189-193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5a14d93d945662986f869c2954b5c0b
https://doi.org/10.5757/asct.2018.27.6.189
https://doi.org/10.5757/asct.2018.27.6.189
Autor:
Jae-Hyung Wi, Won Seok Han, Dae-Hyung Cho, Sang Dae Choi, Boo-Kyoung Kim, Ju-Yeoul Baek, Yong-Duck Chung, Woo-Jung Lee
Publikováno v:
Materials Science in Semiconductor Processing. 81:48-53
Chemical bath deposition (CBD)-ZnS is used as a buffer layer for Cu(In,Ga)Se2 (CIGS) solar cell and then, plasma damage originated from the negative oxygen ions or neutral particles with high energy is regarded as an important issue during subsequent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0931225f8ec37367dc92c25f16ecc871
https://doi.org/10.1016/j.mssp.2018.03.008
https://doi.org/10.1016/j.mssp.2018.03.008
Autor:
Won Seok Han, Woo Jung Lee, Jengsu Yoo, Jae Hyung Wi, Yong-Duck Chung, Dae-Hyung Cho, Yeonjin Yi, Soo Kyung Chang, Yoon Sung Nam, Jisu Yoo
Publikováno v:
Current Applied Physics. 18:405-410
Cu(In,Ga)Se2 (CIGS) solar cells were fabricated by varying the film thickness of the cracker-ZnS (c-ZnS) buffer layer from 0 nm to 20 nm, and performance was found to depend on c-ZnS film thickness. The best cell efficiency of approximately 8% was ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6098b1e7c6ebb4ae83a59ccf08a92431
https://doi.org/10.1016/j.cap.2018.02.003
https://doi.org/10.1016/j.cap.2018.02.003