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Bottom-up Filling of through Silicon Vias Using Galvanostatic Cu Electrodeposition with the Modified Organic Additives

Autor: Donghyung Lee, Jae Jeong Kim, Seunghoe Choe, Myung Jun Kim, Won Gu Cho, Hoe Chul Kim, Il Gyu Jung, Ji Yoon Cho

Publikováno v: Journal of The Electrochemical Society. 162:D109-D114

The chemically synthesized suppressor and leveler are added together with bis(3-sulfopropyl)disulfide (SPS) to galvanostatically fill up the trenches with the similar dimensions to those of the through silicon vias. In our previous study, the deposit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::53761616c7ae7348a7e5c4152a7874f6
https://doi.org/10.1149/2.0561503jes

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Interfacial microstructure and intermetallics developed in the interface between in solders and Au/Ni/Ti thin films during reflow process

Autor: Keesam Shin, Won Gu Cho, Young Ho Kim

Publikováno v: Journal of Electronic Materials. 32:483-491

Intermetallic phases and microstructures formed between In solder and Au/Ni/Ti thin films during reflow were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Two types of two

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c8ae81264a3614d48f45562a3f1b64a5
https://doi.org/10.1007/s11664-003-0130-2

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