Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Won D. Kim"'
Publikováno v:
Inorganic Chemistry. 36:4128-4134
A new macrocyclic ligand 1,4,7,10,-tetraazacyclododecane-1,4,7,10-tetrakis(methanephosphonic acid mono(2‘,2‘,2‘-trifluoroethyl) ester) (F-DOTPME) has been prepared and some of its metal binding properties examined. The ligand protonation consta
Publikováno v:
Inorganic Chemistry. 34:2225-2232
Tetraazamacrocycles containing the pyridine moiety as part of the cyclic backbone and acetate pendant arms were prepared. The resulting products were characterized by high resolution NMR (‘H and I3C) spectroscopy and single-crystal X-ray diffractio
Autor:
Frédéric Maton, A. Dean Sherry, Won D. Kim, Garry E. Kiefer, Robert N. Muller, Kenneth McMillan
Publikováno v:
Inorganic Chemistry. 34:2233-2243
Four Gd{sup 3+} complexes [Gd(BP2A){sup +}, Gd(PC2A){sup +}, Gd(PCTA){sup 0}, and Gd(BPO4A){sup {minus}}] with polyazamacrocyclic ligands that contain a pyridine moiety were prepared and examined for possible use as MRI contrast enhancement agents. T
Publikováno v:
Journal of Crystallographic and Spectroscopic Research. 23:885-890
C5H10N2O3S,1, monoclinicC2/c,a=17.545(5),b=6.822(8),c=13.928(2),β=108.36(7),Z=8, MoKα, λ=0.7107 A,μ=3.56cm−1,R=0.061,Rw=0.099. C8H16N3O6S2Na·2H2O,2, orthorhombicPna21,a=17.964(8),b=10.157(1),c=8.263(4),Z=4, MoKα, λ=0.7107 A,μ=4.07 cm−1,R=
Publikováno v:
SPIE Proceedings.
Silicon Technology Development for the ITRS 65nm-node is in the final stage of an intense 2-year cycle with the full-entitlement technology qualification by the end of 2005. Accordingly, reticle technology development in support of the 65nm-node has
Autor:
Gary Zhang, Changan Wang, Joe Ganeshan, Sean C. O'Brien, Mark E. Mason, Robert A. Soper, Steven G. Hansen, Mark Terry, Won D. Kim, Jason Lee
Publikováno v:
Optical Microlithography XVIII.
Among the valid gate pattern strategies for the 65nm technology node, att-PSM offers the advantage in cost and mask complexity over other contenders such as complimentary alt-PSM and chromeless phase lithography (CPL). A combination of Quasar illumin
Publikováno v:
SPIE Proceedings.
Spectra of contact hole arrays with target diameters ranging from 106 to 131 nm and pattern pitch ranging from 220 to 300 nm are taken from an off-axis (65°) rotating compensator spectroscopic ellipsometry (RCSE).[1] 3-dimensional finite difference
Autor:
Shinji Akima, Junichi Tanzawa, Christopher M. Aquino, Peter M. Rohr, Mark D. Eickhoff, Tsuyoshi Narita, Won D. Kim, Charika Becker, Robert Schlaffer, Yoshiro Yamada, Soo-Kim Quah
Publikováno v:
SPIE Proceedings.
As our chip producing industry rapidly ramps to mass production of the 130nm device technology node and wrapping up the final stages of 90nm node process technology development, the ability to inspect all types of 130nm node masks and early identific
Autor:
Won D. Kim, Mark Somervell, Benjamen Michael Rathsack, Hyesook Hong, Guoqiang Xing, Z. Mark Ma
Publikováno v:
SPIE Proceedings.
Mask critical dimension (CD) control relies on advanced write tools and resist processes. However, a specified write tool and process does not necessarily guarantee high mask quality. As the mask feature size shrinks to below 500 nm, there are other
Publikováno v:
SPIE Proceedings.
This paper presents a methodology for modeling the space printability at the gate level in 193nm lithography. Spaces are shown to be more susceptible to process variations and lens aberrations than lines are. Experimental Scanning Electron Microscopy