Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Wolters, Robertus Adrianus Maria."'
Publikováno v:
Online version.
Thesis (doctoral)--Technische Hogeschool Twente, 1978.
Externí odkaz:
http://dds.crl.edu/CRLdelivery.asp?tid=11521
Autor:
B. Kaleli
Strain is often applied in semiconductor technology to improve the device performance in a field effect transistor (FET). However, it increases the off-state current as well. In this work, we investigated so-called silicon-on-insulator (SOI) fin-shap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33fcac864a403311b49d5e228d03d258
https://doi.org/10.3990/1.9789036504713
https://doi.org/10.3990/1.9789036504713
Autor:
B. Van Hao
During the last several decades, titanium nitride (TiN) has gained much interest because of its low resistivity, chemical inertness and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Thin films of TiN are commonly used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc1adb6c0ba7e9f83332ef8422c77cbe
https://doi.org/10.3990/1.9789036534840
https://doi.org/10.3990/1.9789036534840
Autor:
Roy, Deepu
Advancements in integrated circuits demand an increasing requirement for a faster, low-cost non-volatile memory with improved scaling potential. Phase change memory is an important emerging memory technology qualifying these requirements. With dimens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::19d6df9f484bfca3d86448fe9112ee9d
https://research.utwente.nl/en/publications/02c5f09d-64fd-4667-b1dc-74789e3315ad
https://research.utwente.nl/en/publications/02c5f09d-64fd-4667-b1dc-74789e3315ad
Autor:
Boogaard, Arjen
The fabrication of electronic devices at relatively low temperatures (100-150°C) is becoming increasingly important. It is possible to fabricate devices on glass or polymer substrates at low temperatures, or one can add extra functionality to standa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::c8e0f8e79470459e1d62e996b5345f16
https://research.utwente.nl/en/publications/plasmaenhanced-chemical-vapor-deposition-of-silicon-dioxide(651a0c56-1b54-49a5-87b1-485df967121b).html
https://research.utwente.nl/en/publications/plasmaenhanced-chemical-vapor-deposition-of-silicon-dioxide(651a0c56-1b54-49a5-87b1-485df967121b).html
Autor:
N. Stavitski
The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b80e45a8d93c15ca7f887fc56e52bd1
https://doi.org/10.3990/1.9789036529396
https://doi.org/10.3990/1.9789036529396
In modern integrated circuits with Cu interconnects a diffusion barrier is used between the dielectric and Cu in order to prevent diffusion of Cu through the dielectrics. The choice of such a barrier requires a material exploration and a study of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::6a0f04d09f943e08be0f752155d86029
https://research.utwente.nl/en/publications/diffusion-barriers-for-cu-metallisation-in-si-integrated-circuits(58c2ec59-05cd-4cef-8f2c-1e67b8a027e1).html
https://research.utwente.nl/en/publications/diffusion-barriers-for-cu-metallisation-in-si-integrated-circuits(58c2ec59-05cd-4cef-8f2c-1e67b8a027e1).html