Zobrazeno 1 - 10
of 251
pro vyhledávání: '"Wolfhard Möller"'
Autor:
Shiva Choupanian, Wolfhard Möller, Martin Seyring, Claudia Pacholski, Elke Wendler, Andreas Undisz, Carsten Ronning
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract Ion irradiation can cause burrowing of nanoparticles in substrates, strongly depending on the material properties and irradiation parameters. In this study, it is demonstrated that the sinking process can be accomplished with ion irradiation
Externí odkaz:
https://doaj.org/article/1190088dc6d3463087fd3d70a2c26f68
Autor:
Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2883-2892 (2018)
For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-
Externí odkaz:
https://doaj.org/article/5156d91379fe4eba94329c4846b8921b
Autor:
Nico Klingner, Karl-Heinz Heinig, David Tucholski, Wolfhard Möller, René Hübner, Lothar Bischoff, Gregor Hlawacek, Stefan Facsko
Publikováno v:
Journal of Physical Chemistry Letters 126(2022), 16332-16340
Enhanced interstitial diffusion in tin is a phenomenon often observed during ion-beam irradiation and in lead-free solders. For the latter, this not very well understood, strain-driven mechanism results in the growth of whiskers, which can lead to un
Publikováno v:
Nano Research 16(2023), 1522-1526
Focused ion beam (FIB) processing with low-energy ions has become a standard technique for the manipulation of nanostructures. Many underlying ion beam effects that deviate from conventional high-energy ion irradiation of bulk systems are considered
Autor:
Manoj K. Rajbhar, Biswarup Satpati, Yatendra S. Chaudhary, Shyamal Chatterjee, Wolfhard Möller, Unnikrishnan Manju
Publikováno v:
ACS Applied Nano Materials 3(2020)9, 9064-9075
In this work, for the first time, fragmentation and joining of tungsten oxide (WO3) nanorods induced by a broad ion beam are reported. Although at low energy (5 keV) and moderate ion fluence, nanorods fragment into smaller pieces along the length, at
Publikováno v:
Nanotechnology 33(2022)3, 035703
Ion irradiation of bulk and thin film materials is tightly connected to well described effects such as sputtering or/and ion beam mixing. However, when a nanoparticle is ion irradiated and the ion range is comparable to the nanoparticle size, these e
Autor:
Niranjan S. Ramgir, Manoj K. Rajbhar, Wolfhard Möller, Roman Böttger, Biswarup Satpati, Pritam Das, Stefan Facsko, Shyamal Chatterjee
Publikováno v:
Applied Surface Science 478(2019), 651-660
Fabrication of device though bottom-up approach and using nanowires as building blocks has received significant attention as one can build flexible electronics which can handle stress better than thin film based device. However successful joining of
Autor:
Wolfhard Möller, Bruno Daudin, Eduardo Alves, M. Felizardo, D. Nd. Faye, Emilio Nogales, Mathieu Kociak, T. Auzelle, Luiz H. G. Tizei, Katharina Lorenz, Marco Peres, Bianchi Méndez, Andrés Redondo-Cubero, Pierre Ruterana, X. Biquard
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2019, ⟨10.1021/acs.jpcc.8b12014⟩
Journal of Physical Chemistry C 123(2019)18, 11874-11887
E-Prints Complutense. Archivo Institucional de la UCM
instname
Journal of Physical Chemistry C, 2019, ⟨10.1021/acs.jpcc.8b12014⟩
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Journal of Physical Chemistry C, American Chemical Society, 2019, ⟨10.1021/acs.jpcc.8b12014⟩
Journal of Physical Chemistry C 123(2019)18, 11874-11887
E-Prints Complutense. Archivo Institucional de la UCM
instname
Journal of Physical Chemistry C, 2019, ⟨10.1021/acs.jpcc.8b12014⟩
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
International audience; Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promisi
Autor:
Shyamapada Patra, Pritam Das, Manoj K. Rajbhar, Stefan Facsko, Wolfhard Möller, Shyamal Chatterjee
Publikováno v:
Radiation Physics and Chemistry 196(2022), 110103
Recent developments of heterojunction-based devices through bottom-up approach such as sensors, light-emitters, energy generation and storage have emerged with great interest due to their wide range of operation and application related flexibilities.
Autor:
Wolfhard Möller, Johannes von Borany, Hans-Jürgen Engelmann, Xiaomo Xu, Gregor Hlawacek, Thomas Prüfer, Lothar Bischoff, Stefan Facsko, Karl-Heinz Heinig, Daniel Wolf, René Hübner
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2883-2892 (2018)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-ener