Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Wolfgang-Michael Schulz"'
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
First results of an epitaxially grown suppressor diode with top side integrated NiCr-alloy metal film resistor exhibiting low temperature coefficient are shown. The device is intended to be mounted nearby an insulated gate bipolar transistor (IGBT) d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8483469c5dcca1814593da78e7e20d18
https://doi.org/10.23919/ispsd50666.2021.9452211
https://doi.org/10.23919/ispsd50666.2021.9452211
Vertically stacked and laterally ordered InP and In(Ga)As quantum dots for quantum gate applications
Autor:
Daniel Richter, Ulrich Rengstl, E. Koroknay, Peter Michler, Moritz Bommer, Wolfgang-Michael Schulz, Michael Jetter, Heinz Schweizer, Robert Roßbach, M. Reischle, C. A. Kessler
Publikováno v:
physica status solidi (b). 249:737-746
We report on the epitaxial growth of vertically stacked InP and In(Ga)As quantum dot (QD) layers to realize a triple dot quantum gate structure consisting of an asymmetric control double dot and a single target dot suitable for a CNOT gate structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1fdb8c62e290fb3720d6436bd060625
https://doi.org/10.1002/pssb.201100814
https://doi.org/10.1002/pssb.201100814
Autor:
M. Eichfelder, Robert Roßbach, Wolfgang-Michael Schulz, Peter Michler, Michael Jetter, M. Wiesner, S. Weidenfeld
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:724-729
We present experimental investigations of the transverse beam profile and polarization characteristics of GaInP-based oxide-confined vertical-cavity surface-emitting lasers in dependence on the oxide aperture size, mesa size, current, and temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1cf3f89e53c3822bc2426d353bf1afb
https://doi.org/10.1109/jstqe.2011.2115233
https://doi.org/10.1109/jstqe.2011.2115233
Publikováno v:
Journal of Crystal Growth. 315:123-126
We demonstrate electrically pumped laser light emission in the visible (red) spectral range using self-assembled InP quantum dots embedded in an (Al x Ga 1―x ) 0.51 In 0.49 P matrix lattice matched to GaAs. The structures were fabricated by metal-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc130deb766355c0f1fa0ebd547f88c1
https://doi.org/10.1016/j.jcrysgro.2010.07.018
https://doi.org/10.1016/j.jcrysgro.2010.07.018
Autor:
Michael Jetter, M. Eichfelder, C. A. Kessler, Wolfgang-Michael Schulz, M. Reischle, Robert Roßbach, Peter Michler
Publikováno v:
Journal of Crystal Growth. 315:127-130
We demonstrate electrical pumping of self-assembled InP/Ga 0.51 In 0.49 P quantum dots embedded in a p-i-n resonant-cavity-diode structure with emission in the red spectral region. A high aluminum containing Al 0.98 Ga 0.02 As layer allows wet therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8bc3b7b4410b905123223504f8da70a
https://doi.org/10.1016/j.jcrysgro.2010.08.014
https://doi.org/10.1016/j.jcrysgro.2010.08.014
Autor:
M. Eichfelder, Thomas Schwarzbäck, Wolfgang-Michael Schulz, Robert Roßbach, Michael Jetter, Peter Michler
Publikováno v:
Applied Physics B. 102:789-794
We present a vertical external cavity surface-emitting laser system based on a multi-quantum-well structure with 20 compressively strained GaInP quantum wells for an operation wavelength of around 665 nm with a monolithic integrated distributed Bragg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c0be83c23b6864f62f5ed848b965a5e
https://doi.org/10.1007/s00340-010-4213-5
https://doi.org/10.1007/s00340-010-4213-5
Autor:
Robert Roßbach, Wolfgang-Michael Schulz, G. J. Beirne, M. Reischle, M. Eichfelder, Peter Michler, Michael Jetter
Publikováno v:
Journal of Crystal Growth. 310:5098-5101
We demonstrate the growth of electrically driven InP/AlGaInP quantum dots embedded in a p–i–n diode structure emitting in the red to orange spectral region at room temperature. We observed an increase in emission wavelength by decreasing the quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12556dbbf827477c9cac08824a8fc965
https://doi.org/10.1016/j.jcrysgro.2008.07.036
https://doi.org/10.1016/j.jcrysgro.2008.07.036
Autor:
Michael Jetter, Wolfgang-Michael Schulz, Peter Michler, Robert Roßbach, C. Hermannstädter, G. J. Beirne, M. Reischle
Publikováno v:
Journal of Crystal Growth. 310:5089-5092
We demonstrate the growth of InP/GaInP quantum dots on a low density InAs/GaAs island seed layer ( 10 7 cm - 2 ) by metal-organic vapor phase epitaxy. The strain produced by the underlying InAs islands results in a distinct bimodal size distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ee0a3a527d065d464899bc1243fa9e
https://doi.org/10.1016/j.jcrysgro.2008.07.084
https://doi.org/10.1016/j.jcrysgro.2008.07.084
Publikováno v:
Journal of Crystal Growth. 298:599-602
We demonstrate the growth of an Al 0.66 Ga 0.33 InP/AlInP distributed Bragg reflector (DBR) for wavelengths around 570 nm at 5 K. The DBR was used for light enhancement of self-assembled InP-quantum dots embedded in Al 0.7 Ga 0.3 InP where we detecte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b623c4985b0ae21dae00cafc79c0a9e
https://doi.org/10.1016/j.jcrysgro.2006.10.145
https://doi.org/10.1016/j.jcrysgro.2006.10.145
Autor:
Wolfgang-Michael Schulz, Michael Jetter, M. Reischle, Peter Michler, G. J. Beirne, Robert Roßbach
Publikováno v:
Journal of Crystal Growth. 298:595-598
InP-quantum dots were grown in between different Al-containing Al x Ga 1-x InP barriers in order to increase their emission energy and localization energy. We observed emission energies from 1.85eV (670 nm) to 2.24eV (554 nm). From time-resolved phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d30bdf22f4db313847039f7a7ee9f70
https://doi.org/10.1016/j.jcrysgro.2006.10.144
https://doi.org/10.1016/j.jcrysgro.2006.10.144