Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Wolfgang W. Ruehle"'
Autor:
Nils C. Gerhardt, Falko Hoehnsdorf, C. Ellmers, Wolfgang Stolz, Henning Riechert, Anton Yurevitch Egorov, Joerg Koch, Wolfgang W. Ruehle, Martin R. Hofmann, B. Borchert, Anke Wagner
Publikováno v:
SPIE Proceedings.
The emission dynamics of an optically pumped 1.3 +m (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is investigated. We achieve room-temperature operation at 1285 nm with a low optical pumping threshold and fast emission dynamics: A minimum p
Autor:
Martin R. Hofmann, C. Ellmers, Wolfgang W. Ruehle, Denis Karaiskaj, Simone Leu, Wolfgang Stolz
Publikováno v:
SPIE Proceedings.
Vertical-cavity surface-emitting lasers are optimized for fast intrinsic emission dynamics. The structure contains four times three quantum wells in a 2 (lambda) sin-type cavity. We have realized it using the strain-compensated (GaIn)As/Ga(PAs) mater
Autor:
Siegmar Roth, Wolfgang K. Maser, Andreas Werner, Wolfgang W. Ruehle, L. Akselrod, M. Kaiser, Hugh J. Byrne
Publikováno v:
SPIE Proceedings.
Picosecond time resolved photoluminescence and photoconductivity measurements are performed to investigate the influence of high intensity illumination on the properties of Fullerene crystals. A highly nonlinear dependence of both the photoluminescen
Autor:
Gustaaf Borghs, Holger T. Grahn, Dietrich Bertram, Herbert Lage, Wolfgang W. Ruehle, Chris Van Hoof, Jan Genoe
Publikováno v:
SPIE Proceedings.
The electron and hole transport in a triple-barrier resonant tunneling diode are investigated using photoluminescence spectroscopy on a picosecond and nanosecond time scale. Time- resolved populations are created by exciting only the GaAs contact lay
Publikováno v:
SPIE Proceedings.
The injection of photoexcited carriers into higher subbands by resonant tunneling in GaAs- AlAs superlattices is directly observed by photoluminescence spectroscopy. For a conduction subband spacing larger than the longitudinal optical phonon energy,
Publikováno v:
SPIE Proceedings.
Time resolved luminescence experiments performed on GaA1As-GaAs-A1As nonsymmetric modulation n-doped thick Quantum Wells show an atypical behaviour regarding similar but symmetric ( GaA1As-GaAs-GaA1As ) Quantum Wells. In the latter system the lumines
Publikováno v:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III.
We present experimental results for the thermalization of hot electron-hole plasma in bulk GaAs, AlGa1_As, GaAs/A1GaAs quantum wells and GaAs/AlAs superlattices. The results are compared with calculations of the thermalization of an electron-hole pla
Publikováno v:
SPIE Proceedings.
Electron and hole tunneling transfer processes in asymmetric double quantum well structures are investigated by time-resolved picosecond photoluminescence. Change from nonresonant to resonant tunneling is achieved with a perpendicular eleitric field.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.