Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Wolfgang Kipferl"'
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
This paper describes a plan of tests and several results of experiments that were performed to determine whether wafers that were milled using an inline xenon (Xe) plasma focused ion beam (PFIB) could continue processing through the standard producti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e7cea8fe37f4f92f683fe0ba81e9d6d
Autor:
Dominique Bougeard, Achim Trampert, Matthias Sperl, A. Bergmaier, S. Ahlers, H. Riedl, G. Dollinger, Gerhard Abstreiter, Wolfgang Kipferl
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 32:422-425
We present structural, magnetic and transport properties of Mn-doped Ge layers grown by molecular beam epitaxy (MBE) at low substrate temperatures Ts. Atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED) and transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee1af7c3c20470ec43a49d5e7a85352
https://doi.org/10.1016/j.physe.2005.12.129
https://doi.org/10.1016/j.physe.2005.12.129
Autor:
Matthias Döppe, Ursula Wurstbauer, Werner Wegscheider, Hans-Peter Tranitz, Klaus Wagenhuber, Wolfgang Kipferl, Matthias Reinwald, Dieter Weiss
Publikováno v:
Journal of Crystal Growth. 278:690-694
We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce2cd5b91cca96fbc4189dcff0bd6c0
https://doi.org/10.1016/j.jcrysgro.2004.12.113
https://doi.org/10.1016/j.jcrysgro.2004.12.113
Publikováno v:
Journal of Applied Physics. 93:8230-8235
The thickness dependence of the fourfold in-plane magnetic anisotropy was first observed in epitaxial Fe(001) films and described by the volume anisotropy of bcc Fe with a positive anisotropy constant (K1vol>0) superimposed by a negative interface te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::086931aea424e963145cc1bf41b96695
https://doi.org/10.1063/1.1558638
https://doi.org/10.1063/1.1558638
Publikováno v:
Journal of Applied Physics. 95:7417-7419
Dot arrays with dots of well-defined circular shape have been patterned from epitaxial Fe films on GaAs(001). Magnetization reversal and temperature dependence of the spontaneous magnetization were studied by superconducting quantum interference devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31eabadb9d2995a2b9c9470d186156bf
https://doi.org/10.1063/1.1676055
https://doi.org/10.1063/1.1676055
Publikováno v:
Journal of Applied Physics. 93:7601-7603
Thermal spin excitations in confined ferromagnetic structures become increasingly important, e.g., because they reduce tunnel magnetoresistance in highly integrated magnetic memories and the stability of stored information. Here, the effect of latera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea09b6eb4e8a6a373b065e3b0d49fd2e
https://doi.org/10.1063/1.1555314
https://doi.org/10.1063/1.1555314
Publikováno v:
Journal of Applied Physics. 99:08J703
Spin-wave theory predicts reduced thermal spin-wave excitations due to a magnetic anisotropy. Recent results show that a strong uniaxial in-plane anisotropy in ultrathin Fe/GaAs(001) films indeed stabilizes the ferromagnetic order versus thermal spin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc6f9532d3cd5f59ec50b9438d6fca18
https://doi.org/10.1063/1.2167329
https://doi.org/10.1063/1.2167329
Autor:
Günther Bayreuther, Matthias Sperl, M. Zistler, J. Lodermeyer, S. Jordan, E. Diaconu, Wolfgang Kipferl, Heiner J. Gores, Michael Multerer
Publikováno v:
Journal of The Electrochemical Society. 153:C242
Electroplating of dysprosium from several nonaqueous solutions and from an ionic liquid was studied. Dysprosium metal was used as the anode material, and several metals and a silicon wafer with a vacuum-deposited gold layer were used as cathode mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8103d2561ddb700ded74d98a8a396a8e
https://doi.org/10.1149/1.2172548
https://doi.org/10.1149/1.2172548
Publikováno v:
Journal of Applied Physics. 97:10D505
A magnetic tunnel transistor with spin-valve metallic base and epitaxial Schottky barrier is used to probe the temperature and energy dependence of the magnetocurrent. The magnetocurrent ratio (MCR) reaches values up to 900% in our ultrathin microstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44fd870217021a407d5efd30b340dead
https://doi.org/10.1063/1.1853892
https://doi.org/10.1063/1.1853892
Publikováno v:
Journal of Applied Physics. 97:10B313
Epitaxial Fe(001) films with thicknesses less than 20 monolayers were grown on epitaxial Au(001) surfaces by molecular beam epitaxy. All films have a fourfold anisotropy and a negligible uniaxial component. In contrast, the magnetic behavior of Fe fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2201949c99af4715c43105c4f69d6cd5
https://doi.org/10.1063/1.1854477
https://doi.org/10.1063/1.1854477