Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Wolfgang Fränzel"'
Publikováno v:
The Journal of Physical Chemistry Letters. 9:4808-4813
We present the growth, phase transitions, and thermal decomposition of CsPbX3 (X = I, Br) thin films monitored by in situ X-ray diffraction (XRD). The perovskite films are prepared in vacuum via co-evaporation of PbX2 and CsX (X = I, Br) onto glass s
Publikováno v:
Journal of Materials Chemistry A. 6:11496-11506
We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films. The thin films are prepared by vac
Autor:
Stefan Hartnauer, Torsten Hölscher, Setareh Zahedi-Azad, Matthias Maiberg, Wolfgang Fränzel, Enrico Jarzembowski, Roland Scheer
Publikováno v:
Thin Solid Films. 633:208-212
The decay of the room-temperature time-resolved photoluminescence (TRPL) on thin-film semiconductors such as Cu(In,Ga)Se2 and Cu2ZnSnSe4 often is bi-exponential. This can be traced back either to fluctuations of the electrostatic potential or to mino
Publikováno v:
Thin Solid Films. 633:61-65
We apply the concept of point contact solar cells to a model system having 190 nm thick Cu(In,Ga)Se 2 (CIGSe) films by using a SiO 2 back side film with periodic openings to the molybdenum layer being the electrical contact. The openings are plasma e
Publikováno v:
The Journal of Physical Chemistry Letters. 5:3308-3312
Perovskite solar cells based on (CH3NH3)Pb(I,Cl)3 have recently demonstrated rapidly increasing cell efficiencies. Here, we show progress identifying phases present during the growth of (CH3NH3)Pb(I,Cl)3 perovskite thin films with the vacuum-based co
Autor:
Roland Scheer, Wolfgang Fränzel, Bodo Fuhrmann, Thomas Schneider, Enrico Jarzembowski, Hartmut S. Leipner
Publikováno v:
Light, Energy and the Environment.
An intermediate SIO2 layer with periodical openings was prepared between the absorber and back contact of a CIGSe solar cell. The enhanced absorption through this layer was investigated experimentally and using RCWA simulations.
Autor:
Hartmut S. Leipner, Gunnar Leibiger, Wolfgang Fränzel, I. Ratschinski, J. Michler, Frank Heyroth, Frank Habel, W. Mook
Publikováno v:
physica status solidi c. 10:76-79
(0001) GaN single crystals having a thickness of 3.4 mm and a density of in-grown dislocations of 3.5 x 106 cm-2 have been deformed at room temperature using a cube corner, a Berkovich and a Vickers indenter, respectively. Cube corner indentations we
Autor:
I. Ratschinski, Wolfgang Fränzel, Gunnar Leibiger, Frank Habel, Frank Heyroth, Hartmut S. Leipner
Publikováno v:
Materials Science Forum. 725:67-70
(0001) GaN bulk crystals with a thickness of 3.4 mm and a density of in-grown dislocations of 3.5·106cm-2have been deformed at room temperature using a Vickers indenter at two different sample orientations in relation to the indenter. Dislocations a
Publikováno v:
Materials Science Forum. 725:199-202
Silicon polymorphs have been prepared by means of scratching or indentation of Si(100) surfaces. Different indenter types have been used in order to validate the independence of silicon polymorph formation from indenter geometry. The formation of sil
Autor:
Ramona Schweyen, Dirk Vordermark, Jeremias Hey, Thomas Kuhnt, Guido Hildebrandt, Wolfgang Fränzel
Publikováno v:
Strahlentherapie und Onkologie. 188:21-28