Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Autor: Nicolo Oliva, Emanuele Andrea Casu, Wolfgang A. Vitale, Igor Stolichnov, Adrian Mihai Ionescu

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1041-1047 (2018)

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer

Externí odkaz: https://doaj.org/article/59659dc256cc4ca4a17bcb8a5ffc85db

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Autor: Adrian M. Ionescu, Anna Krammer, Arnab Biswas, G. V. Luong, Emanuele A. Casu, Qing-T. Zhao, Wolfgang A. Vitale, Cem Alper, Andreas Schüler, Teodor Rosca, Siegfried Mantl

Publikováno v: Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Scientific Reports
Scientific reports 7(1), 355 (2017). doi:10.1038/s41598-017-00359-6

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b10e8ba5499e35774cfdd7eee0823637
https://doaj.org/article/73ca29e6befb407bb05995e0d2252883

Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition

Autor: Nicolo Oliva, Andreas Schüler, Alessandro Fumarola, Anna Krammer, Matteo Cavalieri, Andrei A. Muller, Emanuele A. Casu, Adrian M. Ionescu, Wolfgang A. Vitale, Montserrat Fernandez-Bolanos

Publikováno v: IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society, Vol 6, Pp 965-971 (2018)
IEEE journal of the Electron Devices Society

This paper presents the design, fabrication, and electrical characterization of a reconfigurable RF capacitive shunt switch that exploits the electro-thermally triggered vanadium dioxide (VO2) insulator to metal phase transition. The RF switch is fur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4484154dd5a8e84dc0efaddbd0681895

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

Autor: Pankaj Sharma, Wolfgang A. Vitale, Adrian M. Ionescu, Clara F. Moldovan, Laurent Syavoch Bernard

Publikováno v: Microelectronic Engineering. 145:5-8

Display Omitted We suspend graphene membranes and assess their use for RF NEMS capacitive switches.Measurements prove successful graphene suspension and electrostatic actuation.We extract capacitance and resistance for each bias voltage using an equi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1a0ae5bd6526a4c4bc93c2bd022d81fb
https://doi.org/10.1016/j.mee.2015.01.032

Modulated scattering technique in the terahertz domain enabled by current actuated vanadium dioxide switches

Autor: Juan R. Mosig, Wolfgang A. Vitale, Mohamed Chaker, Michele Tamagnone, S. Capdevila, B. Le Drogoff, Anja K. Skrivervik, Nicolas Émond, Adrian M. Ionescu

Publikováno v: Scientific Reports

The modulated scattering technique is based on the use of reconfigurable electromagnetic scatterers, structures able to scatter and modulate an impinging electromagnetic field in function of a control signal. The modulated scattering technique is use

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a35c9d32c5fe7271257f1152e4c37eb
https://doi.org/10.1038/srep41546