Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Wojciech Słysz"'
Autor:
Renata Kruszka, M. Wegrzecki, Marek Guziewicz, Jan Bar, Andrzej Panas, Wojciech Słysz, A. Klimov
Publikováno v:
Superconductivity and Particle Accelerators 2018.
We present a new type of a quantum detector, namely, the superconducting single-photon detector (SSPD), and demonstrate that it can be implemented in various single-photon counting applications, ranging from the visible light to near-infrared telecom
Autor:
Wolfgang Lang, Roman Puźniak, G. Zechner, A. Klimov, Renata Kruszka, Marek Guziewicz, Maciej Węgrzecki, Wojciech Słysz, Bernd Aichner, Rita Mühlgassner, Roman Sobolewski, Florian Jausner
Publikováno v:
SPIE Proceedings.
Thermodynamic fluctuations of the superconducting order parameter in NbN/NiCu and NbTiN/NiCu superconductor/ferromagnet (S/F) thin bilayers patterned to microbridges are investigated. Plain NbN and NbTiN films served as reference materials for the an
Autor:
M. Wegrzecki, Piotr Prokaryn, Michał Marchewka, Rafał Dobrowolski, Andrzej Sierakowski, Helena Kłos, Andrzej Panas, Marek Nieprzecki, Jan Bar, Michal Zaborowski, Wojciech Słysz, Bartłomiej Seredyński, Tadeusz Piotrowski, Dariusz Szmigiel, A. Klimov
Publikováno v:
SPIE Proceedings.
In this paper, the design and technology of two types of 16-element photodiode arrays is described. The arrays were developed by the ITE and are to be used in detection of microdeflection of laser radiation at the Institute of Metrology and Biomedica
Autor:
Jan Bar, Tadeusz Piotrowski, M. Wegrzecki, Beata Synkiewicz, Michał Marchewka, Helena Kłos, A. Klimov, Ryszard Czarnota, Andrzej Sierakowski, Wojciech Słysz, Dariusz Szmigiel, Marek Nieprzecki, Zbigniew Puzewicz, Jan Kulawik, Rafał Dobrowolski, Bartłomiej Seredyński, Andrzej Panas, Michal Zaborowski
Publikováno v:
SPIE Proceedings.
In this paper a concept of a new bulk structure of p + - υ -n + silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8
Autor:
A. Klimov, M. Wegrzecki, Jan Bar, Bartłomiej Seredyński, Michał Marchewka, V. Kolkovsky, Wojciech Słysz, M. Guziewicz
Publikováno v:
SPIE Proceedings.
Critical current and current-voltage characteristics of epitaxial Nb(Ti)N submicron ultrathin structures were measured as function of temperature. For 700-nm-wide bridge we found current-driven vortex de-pinning at low temperatures and thermally acti
Autor:
Rafal Jakiela, Wojciech Słysz, Wojciech Jung, Andrzej Kociubiński, Piotr Grabiec, Tadeusz Budzyński, Andrzej Panas, Adam Barcz, Jacek Marczewski, B. Jaroszewicz
Publikováno v:
Vacuum. 70:81-85
A novel technique of manufacturing high electric performance p–n junctions has been investigated in this paper. In the first step, amorphous silicon films (a-Si) with gradually changed thickness of 20, 36, 81.5 and 106 nm have been deposited on low
Autor:
M. Wegrzecki, Jan Bar, Andrzej Panas, Iwona Wegrzecka, Michal Zaborowski, Tadeusz Budzyński, Helena Kłos, Tadeusz Piotrowski, Wojciech Słysz, Piotr Grabiec, Maciej Stolarski, Dariusz Wolski, Dariusz Szmigiel, Arkadiusz Chłopik
Publikováno v:
SPIE Proceedings.
The paper presents the design, technology and parameters of a new, silicon 64-element linear photodiode array developed at the Institute of Electron Technology (ITE) for the detection of scintillations emitted by CsI scintillators (λ≈550 nm). The
Autor:
Tadeusz Budzyński, Andrzej Panas, Piotr Grabiec, Iwona Wegrzecka, Maciej Stolarski, M. Wegrzecki, Jan Bar, Alexander Yakushev, Helena Kłos, Dariusz Szmigiel, Wojciech Słysz, Michal Zaborowski
Publikováno v:
SPIE Proceedings.
The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transacti
Autor:
Iwona Wegrzecka, Dariusz Szmigiel, Piotr Grabiec, Roman Kozłowski, Andrzej Panas, Michal Zaborowski, Wojciech Słysz, M. Wegrzecki, Tadeusz Budzyński, Jan Bar, Jerzy Sarnecki
Publikováno v:
SPIE Proceedings.
The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an activ
Autor:
Alexander Yakushev, Dariusz Szmigiel, Wojciech Słysz, Jan Bar, Krzysztof Witek, Michal Cież, Marek Wielunski, Roman Kozłowski, Piotr Grabiec, Jerzy Sarnecki, Jan Kulawik, M. Wegrzecki, Iwona Wegrzecka, Michal Zaborowski, Andrzej Panas, Tadeusz Budzyński
Publikováno v:
SPIE Proceedings.
The paper discusses the design of charged-particle detectors commissioned and developed at the Institute of Electron Technology (ITE) in collaboration with foreign partners, used in international research on transactinide elements and to build person