Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Wojciech Macherzyński"'
Autor:
Żaneta Górecka, Dariusz Grzelecki, Wiktor Paskal, Emilia Choińska, Joanna Gilewicz, Robert Wrzesień, Wojciech Macherzyński, Michał Tracz, Elżbieta Budzińska-Wrzesień, Maria Bedyńska, Michał Kopka, Agnieszka Jackowska-Tracz, Ewelina Świątek-Najwer, Paweł K. Włodarski, Janusz Jaworowski, Wojciech Święszkowski
Publikováno v:
ACS biomaterials scienceengineering. 8(2)
This study aimed to evaluate, for the first time, implantable, biodegradable fiducial markers (FMs), which were designed for bimodal, near-infrared fluorescence-based (NIRF) and X-ray-based imaging. The developed FMs had poly(l-lactide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8534b35e839926cb0655ac10c8dce7b
https://pubmed.ncbi.nlm.nih.gov/35020357
https://pubmed.ncbi.nlm.nih.gov/35020357
Autor:
Grzegorz Ilgiewicz, Wojciech Macherzynski, Joanna Prazmowska-Czajka, Andrzej Stafiniak, Regina Paszkiewicz
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 355-360 (2021)
Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usua
Externí odkaz:
https://doaj.org/article/df16158e999a4fe4bcf604a65f2fe8e3
Autor:
Wojciech Macherzynski, Jacek Gryglewicz, Andrzej Stafiniak, Joanna Prazmowska, Regina Paszkiewicz
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 14, Iss 1, Pp 83-88 (2016)
Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and so
Externí odkaz:
https://doaj.org/article/10bd34bdb80f4a47a49f373cfe3835d1
Autor:
Jacek Gryglewicz, Wojciech Macherzynski, Andrzej Stafiniak, Bogdan Paszkiewicz, Regina Paszkiewicz
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 14, Iss 2, Pp 218-222 (2016)
Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment
Externí odkaz:
https://doaj.org/article/644cd9d1af0a4589b624265414ac7140