Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Wojciech Andrysiewicz"'
Autor:
Katarzyna Dyndal, Arkadiusz Zarzycki, Wojciech Andrysiewicz, Dominik Grochala, Konstanty Marszalek, Artur Rydosz
Publikováno v:
Sensors, Vol 20, Iss 11, p 3142 (2020)
The p-n heterostructures of CuO-Ga2O3 obtained by magnetron sputtering technology in a fully reactive mode (deposition in pure oxygen) were tested under exposure to low acetone concentrations. After deposition, the films were annealed at previously c
Externí odkaz:
https://doaj.org/article/82216a5a782d41a7bc1c39f674e72909
Autor:
Mateusz Wlazło, Maciej Haras, Grzegorz Kołodziej, Oliwia Szawcow, Jakub Ostapko, Wojciech Andrysiewicz, Dzmitry S. Kharytonau, Thomas Skotnicki
Publikováno v:
Materials; Volume 15; Issue 19; Pages: 6767
Recently, an unprecedented growth in the internet of things (IoT) is being observed, which is becoming the main driver for the entire semiconductor industry. Reliable maintenance and servicing of the IoT is becoming challenging, knowing that the IoT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c282b5b0ad60bc1c06d2b19cc29710c
https://pubmed.ncbi.nlm.nih.gov/36234108
https://pubmed.ncbi.nlm.nih.gov/36234108
Autor:
Marcin Słoma, Artur Rydosz, Kacper Skarżyński, Konstanty Marszałek, Jakub Krzemiński, Wojciech Andrysiewicz
Publikováno v:
Electronic Materials Letters. 16:146-155
Abstract Gas sensors are widely used in many industrial and home applications. There is therefore continued need to develop novel gas sensor substrates which provide good mechanical and electrical stability, and good flexibility in comparison with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87eb904502082120a477c07629a9321c
https://doi.org/10.1007/s13391-020-00199-z
https://doi.org/10.1007/s13391-020-00199-z
Publikováno v:
Coatings
Volume 10
Issue 4
Coatings, Vol 10, Iss 378, p 378 (2020)
Volume 10
Issue 4
Coatings, Vol 10, Iss 378, p 378 (2020)
Copper oxide (CuO) ultra-thin films were obtained using magnetron sputtering technology with glancing angle deposition technique (GLAD) in a reactive mode by sputtering copper target in pure argon. The substrate tilt angle varied from 45 to 85°
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ef368191bd50dcefc510b803a8d7033
Publikováno v:
Proceedings, Vol 14, Iss 1, p 40 (2019)
Gas detectors have constantly been developed over the few last decades as a result ofindustrial demands: for monitoring air quality [...]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53cdb18dacd67f89852daad5a54a5221
https://www.mdpi.com/2504-3900/14/1/40
https://www.mdpi.com/2504-3900/14/1/40
Autor:
Konstanty Marszałek, Artur Rydosz, Maciej Sitarz, Kamila Kollbek, Katarzyna Dyndał, Wojciech Andrysiewicz
Publikováno v:
Vacuum. 177:109378
The deposition process and investigation of the physical properties of tungsten trioxide (WO3) thin films are presented in this paper. The WO3 thin films were deposited by magnetron sputtering technology with glancing angle deposition technique (GLAD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dd9af2ef6f0b6b44c649d5c0462840e
https://doi.org/10.1016/j.vacuum.2020.109378
https://doi.org/10.1016/j.vacuum.2020.109378
Autor:
Wojciech Andrysiewicz, Dominik Rzepka, Marek Miskowicz, Jakub Szyduczynski, Dariusz Koscielnik
Publikováno v:
EBCCSP
The paper addresses the problems of design of picosecond resolution time-to-digital converter based on successive approximation (SA-TDC). The principle of the conversion process in SA-TDC consists in successive delaying the events defining a start an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86ae83fb6f1607f99f16203eedd57e6d
https://doi.org/10.1109/ebccsp.2016.7605284
https://doi.org/10.1109/ebccsp.2016.7605284
Publikováno v:
ISSE
The implementation of the I2C-compatible serial interface for asynchronous ADCs that output data irregularly in time is reported in the paper. The device contains I2C hardware master-transmitter functionality and is capable of operating fully autonom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18545b08acb3a9e352dc7d3de9e67f39
https://doi.org/10.1109/syseng.2015.7302736
https://doi.org/10.1109/syseng.2015.7302736