Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Wołos, Agnieszka"'
Autor:
Padzik-Wołos, Agnieszka1 apadzik@kozminski.edu.pl
Publikováno v:
Proceedings of ISPIM Conferences. 2024, p1-11. 11p.
Autor:
Sitnicka, Joanna, Park, Kyungwha, Skupiński, Paweł, Grasza, Krzysztof, Reszka, Anna, Sobczak, Kamil, Borysiuk, Jolanta, Adamus, Zbigniew, Tokarczyk, Mateusz, Avdonin, Andrei, Fedorchenko, Irina, Abaloszewa, Irina, Turczyniak-Surdacka, Sylwia, Olszowska, Natalia, Kolodziej, Jacek, Kowalski, Bogdan J., Deng, Haiming, Konczykowski, Marcin, Krusin-Elbaum, Lia, Wolos, Agnieszka
Publikováno v:
2D Materials 9, 015026 (2022)
MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally
Externí odkaz:
http://arxiv.org/abs/2109.00044
Autor:
Roszak, Rafał, Wołos, Agnieszka, Benke, Marcin, Gleń, Łukasz, Konka, Jakub, Jensen, Phillip, Burgchardt, Paweł, Żądło-Dobrowolska, Anna, Janiuk, Piotr, Szymkuć, Sara, Grzybowski, Bartosz A.
Publikováno v:
In Chem 14 March 2024 10(3):952-970
Autor:
Deng, Haiming, Chen, Zhiyi, Wolos, Agnieszka, Konczykowski, Marcin, Sobczak, Kamil, Sitnicka, Joanna, Fedorchenko, Irina V., Borysiuk, Jolanta, Heider, Tristan, Plucinski, Lukasz, Park, Kyungwha, Georgescu, Alexandru B., Cano, Jennifer, Krusin-Elbaum, Lia
Publikováno v:
Nature Physics 17, 36-42(2021)
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most co
Externí odkaz:
http://arxiv.org/abs/2001.10579
Autor:
Kierdaszuk, Jakub, Kaźmierczak, Piotr, Bożek, Rafał, Grzonka, Justyna, Krajewska, Aleksandra, Zytkiewicz, Zbigniew R., Sobanska, Marta, Klosek, Kamil, Wołoś, Agnieszka, Kamińska, Maria, Wysmołek, Andrzej, Drabińska, Aneta
A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a
Externí odkaz:
http://arxiv.org/abs/1709.04908
Akademický článek
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Autor:
Zhao, Lukas, Konczykowski, Marcin, Deng, Haiming, Korzhovska, Inna, Begliarbekov, Milan, Chen, Zhiyi, Papalazarou, Evangelos, Marsi, Marino, Perfetti, Luca, Hruban, Andrzej, Wołoś, Agnieszka, Krusin-Elbaum, Lia
Publikováno v:
Nature Comm. 7, 10957 (2016)
Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charg
Externí odkaz:
http://arxiv.org/abs/1605.06933
Autor:
Kierdaszuk, Jakub, Kaźmierczak, Piotr, Drabińska, Aneta, Korona, Krzysztof, Wołoś, Agnieszka, Kamińska, Maria, Wysmołek, Andrzej, Pasternak, Iwona, Krajewska, Aleksandra, Pakuła, Krzysztof, Zytkiewicz, Zbigniew R.
Publikováno v:
Phys. Rev. B 92, 195403 (2015)
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spect
Externí odkaz:
http://arxiv.org/abs/1506.00217
Autor:
Wolos, Agnieszka, Drabinska, Aneta, Kaminska, Maria, Hruban, Andrzej, Strzelecka, Stanislawa G., Materna, Andrzej, Piersa, Miroslaw, Romaniec, Magdalena, Diduszko, Ryszard
Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity type of th
Externí odkaz:
http://arxiv.org/abs/1412.2012
Publikováno v:
Management Issues / Problemy Zarządzania. 2023, Vol. 21 Issue 2, p75-102. 28p.