Zobrazeno 1 - 10
of 557
pro vyhledávání: '"Wołkow, P. P."'
Autor:
Altincicek, Furkan M., Livadaru, Lucian, Leon, Christopher C., Chutora, Taras, Yuan, Max, Achal, Roshan, Croshaw, Jeremiah, Pitters, Jason, Wolkow, Robert
Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wi
Externí odkaz:
http://arxiv.org/abs/2411.10625
Autor:
Walter, Marcel, Croshaw, Jeremiah, Ng, Samuel Sze Hang, Walus, Konrad, Wolkow, Robert, Wille, Robert
Although fabrication capabilities of Silicon Dangling Bonds have rapidly advanced from manual labor-driven laboratory work to automated manufacturing in just recent years, sub-nanometer substrate defects still pose a hindrance to production due to th
Externí odkaz:
http://arxiv.org/abs/2311.12042
Autor:
Ng, Samuel S. H., Croshaw, Jeremiah, Walter, Marcel, Wille, Robert, Wolkow, Robert, Walus, Konrad
Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with
Externí odkaz:
http://arxiv.org/abs/2211.08698
Autor:
Gracjan Wątor, Maria Kołton-Wróż, Paweł Wołkow, Łukasz Bełch, Piotr Chłosta, Joanna Szpor, Agnieszka Klimkowska, Katarzyna Nejman, Alicja Józkowicz, Aleksandra Piechota-Polańczyk, Krzysztof Okoń
Publikováno v:
Polish Journal of Pathology, Vol 74, Iss 4, Pp 265-270 (2024)
Prostate cancer (PC) is one of the most common cancers in males. A significant proportion of PCs bear TMPRSS2-ETS translocation and overexpress ERG transcription factor, allowing classification into ERG+ and ERG– groups, which differ in several fea
Externí odkaz:
https://doaj.org/article/7e552c7d6ccc44c7bca3a24e4c48f843
Autor:
Croshaw, Jeremiah, Huff, Taleana, Rashidi, Mohamad, Wood, John, Lloyd, Erika, Pitters, Jason, Wolkow, Robert
Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at varying energies, we identify the formation of previously unobserved
Externí odkaz:
http://arxiv.org/abs/2011.08056
Publikováno v:
Beilstein J. Nanotechnol. 2020, 11, 1346-1360
The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption of surface hydrogen atoms. While samples with
Externí odkaz:
http://arxiv.org/abs/2002.09138
Akademický článek
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Akademický článek
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Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum computation, and data storage all rely on a well-developed understandi
Externí odkaz:
http://arxiv.org/abs/1907.03218
Autor:
Huff, Taleana, Dienel, Thomas, Rashidi, Mohammad, Achal, Roshan, Livadaru, Lucian, Croshaw, Jeremiah, Wolkow, Robert A.
Publikováno v:
ACS Nano 13(9), 10566-10575 (2019)
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electro
Externí odkaz:
http://arxiv.org/abs/1902.11296