Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Wlodek Strupiński"'
Autor:
Patrick R. Whelan, Domenico De Fazio, Iwona Pasternak, Joachim D. Thomsen, Steffen Zelzer, Martin O. Mikkelsen, Timothy J. Booth, Lars Diekhöner, Ugo Sassi, Duncan Johnstone, Paul A. Midgley, Wlodek Strupinski, Peter U. Jepsen, Andrea C. Ferrari, Peter Bøggild
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Terahertz time-domain spectroscopy (THz-TDS) can be used to map spatial variations in electrical properties such as sheet conductivity, carrier density, and carrier mobility in graphene. Here, we consider wafer-scale graphene grown on german
Externí odkaz:
https://doaj.org/article/f221f236947e4dd5af7fcbd8f77ad5cc
Autor:
Patrycja Śpiewak, Marcin Gębski, Włodek Strupiński, Tomasz Czyszanowski, Walery Kołkowski, Iwona Pasternak, Robert P. Sarzała, Włodzimierz Nakwaski, Włodzimierz Wasiak
Publikováno v:
Metrology and Measurement Systems, Vol vol. 30, Iss No 3, Pp 519-529 (2023)
Experimental methods are presented for determining the thermal resistance of vertical-cavity surfaceemitting lasers (VCSELs) and the lateral electrical conductivity of their p-type semiconductor layers. A VCSEL structure was manufactured from III-As
Externí odkaz:
https://doaj.org/article/ebbbc943f2f2415db6617e4cb9a385ca
The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser light indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d92d057a69752f9776f1a55602a6a7e
Publikováno v:
Acta Physica Polonica A. 120:136-139
Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV He ions. Ion bombardment was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2a5f7bcdb9ceba0695870b05424241a
https://doi.org/10.12693/aphyspola.120.136
https://doi.org/10.12693/aphyspola.120.136
Autor:
Dominika Teklinska, Andrzej Olszyna, Kinga Kościewicz, Grzegorz Kowalski, Wlodek Strupiński, Mateusz Tokarczyk, Krystyna Mazur
Publikováno v:
Materials Science Forum. :95-98
A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers, which are comparable to the size of an elementary cell (8°off-axis) and achieve the density of BPD=8•103/cm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f54574c01c670bdf7e942002c359169d
https://doi.org/10.4028/www.scientific.net/msf.679-680.95
https://doi.org/10.4028/www.scientific.net/msf.679-680.95
Autor:
Roman Stepniewski, Kinga Kościewicz, Jacek M. Baranowski, Jolanta Borysiuk, Wlodek Strupiński, Andrzej Wysmołek, Rafał Bożek
Publikováno v:
Materials Science Forum. :199-202
The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the mixture (H2-C3H8) was performed prior to growth at 1600oC temperature under 100 mbar. Systematic studies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236dcb258322a8b6757191841a264ed8
https://doi.org/10.4028/www.scientific.net/msf.615-617.199
https://doi.org/10.4028/www.scientific.net/msf.615-617.199
Autor:
Kinga Kościewicz, Wlodek Strupiński, Renata Ratajczak, Karolina Pagowska, Marek Wojcik, Piotr Caban, Jan Szmidt, A. Turos, Jaroslaw Gaca
Publikováno v:
Materials Science Forum. :939-942
The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase epitaxy was studied. Substrate etching has an impact on the crystallographic structure of epilayers and improves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aebbe30cd8781675e73cda9fea17ba28
https://doi.org/10.4028/www.scientific.net/msf.615-617.939
https://doi.org/10.4028/www.scientific.net/msf.615-617.939
Publikováno v:
Materials Science Forum. :207-210
Transmission Electron Microscopy (TEM) investigations of graphene layers on Si terminated 4H-SiC(0001) are presented. The graphene layers have been grown in a standard method using decomposition of silicon carbide. Two kind of graphene layers have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d925f469bc450e0f8d423c0673a2f39a
https://doi.org/10.4028/www.scientific.net/msf.615-617.207
https://doi.org/10.4028/www.scientific.net/msf.615-617.207
Publikováno v:
Materials Science Forum. :597-600
Crystallographic quality of the epitaxial layers depends on the process temperature, partial pressures of active components and the surface polarity and also on the crystallographic quality of the subsurface layer resulting from the preparation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1147c2ed8720cc9bdaff6c6ff669e3ab
https://doi.org/10.4028/www.scientific.net/msf.615-617.597
https://doi.org/10.4028/www.scientific.net/msf.615-617.597
Publikováno v:
Materials Science Forum. :155-158
The influence of in situ etching of Si-face n-4H-SiC wafers in H2 and propane on the surface morphology of the grown epi-layers were examined using differential interference contrast (DIC) optical microscopy and atomic force microscope (AFM). Two def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c92e334f1f98ac18aad872e66c052c40
https://doi.org/10.4028/www.scientific.net/msf.600-603.155
https://doi.org/10.4028/www.scientific.net/msf.600-603.155