Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Witold Kula"'
Autor:
Witold Kula
Publikováno v:
Studia z Historii Społeczno-Gospodarczej XIX i XX Wieku, Vol 21-22, Pp 29-380 (2019)
In the years 2020–2021, Łódź and other surrounding cities will celebrate the 200th anniversary of the decisions made by the authorities of the Kingdom of Poland, aimed at the industrialization of this part of Polish territory. Some of these urba
Externí odkaz:
https://doaj.org/article/2fbe6a1fb1a8487a95635e2fd40a2617
Autor:
Witold Kula
Measures and Men, considers times and societies in which weighing and measuring were meaningful parts of everyday life and weapons in class struggles.Originally published in 1986.The Princeton Legacy Library uses the latest print-on-demand technology
Autor:
Witold Kula
Publikováno v:
Studia z Historii Społeczno-Gospodarczej XIX i XX Wieku, Vol 21-22, Pp 29-380 (2019)
In the years 2020–2021, Łódź and other surrounding cities will celebrate the 200th anniversary of the decisions made by the authorities of the Kingdom of Poland, aimed at the industrialization of this part of Polish territory. Some of these urba
Autor:
Stefano Ambrogio, W. Chen, Roberto Carboni, Daniele Ielmini, Witold Kula, Andy Lyle, Manzar Siddik, Gurtej S. Sandhu, Jon Harms
Publikováno v:
IEEE Transactions on Electron Devices
Perpendicular spin-transfer torque (p-STT) magnetic memory is gaining increasing interest as a candidate for storage-class memory, embedded memory, and possible replacement of static/dynamic memory. All these applications require extended cycling end
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb13ba97e7d43e6c7073b86625bddbb6
http://hdl.handle.net/11311/1060237
http://hdl.handle.net/11311/1060237
Autor:
Andy Lyle, Daniele Ielmini, Manzar Siddik, Stefano Ambrogio, W. Chen, Roberto Carboni, Witold Kula, Jon Harms, G. Sandhu
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM)
Perpendicular spin-transfer torque (p-STT) memory is attracting an increasing interest as storage class memory (SCM) or static/dynamic RAM replacement. In these applications, high speed and extended endurance are essential and sometimes conflicting r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd7fb122431f45e40b380f10695d3372
http://hdl.handle.net/11311/1035665
http://hdl.handle.net/11311/1035665
Autor:
Witold Kula, Terry Torng, Thomas M. Maffitt, Qiang Chen, Jonathan Z. Sun, Ruth Tong, Denny D. Tang, John K. DeBrosse, Robert Beach, Tai Min, Daniel C. Worledge, Cheng Tzong Horng, Mao-Min Chen, Po-Kang Wang, Guenole Jan, Tom Zhong, William J. Gallagher
Publikováno v:
IEEE Transactions on Magnetics. 46:2322-2327
Key design parameters of 64 Mb STT-MRAM at 90-nm technology node are discussed. A design point was developed with adequate TMR for fast read operation, enough energy barrier for data retention and against read disturbs, a write voltage satisfying the
Publikováno v:
Journal of Applied Physics. 120:203902
Voltage-controlled magnetic anisotropy (VCMA) effect has attracted a significant amount of attention in recent years because of its low cell power consumption during the anisotropy modulation of a thin ferromagnetic film. However, the applied voltage
Publikováno v:
The European Physical Journal B. 2:301-311
We report our studies on the superconducting and normal-state properties of metallic YBa2Cu3Ox thin lms (Tc;mid 52 K) exposed to long-term white-light illumination (photodoping). It was observed that the eects of photoexcitation strongly depended on
Publikováno v:
Physical Review B. 57:8702-8708
Autor:
Donald P. Butler, A. Jahanzeb, Roman Sobolewski, Zeynep Celik-Butler, P. C. Shan, Witold Kula, C.M. Travers
Publikováno v:
Solid-State Electronics. 41:895-899
We have explored the charge transport mechanisms in six different YBaCuO semiconducting thin films in the temperature range of 70 K to room temperature. Two of the samples were deposited on LaAlO 3 substrate and were tetragonal with the composition o