Zobrazeno 1 - 10
of 498
pro vyhledávání: '"Witkowski, B"'
Autor:
Adhikari, A., Lysak, A., Wierzbicka, A., Sybilski, P., Reszka, A., Witkowski, B. S., Przezdziecka, E.
Publikováno v:
Materials Science in Semiconductor Processing (2022)
Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study the growth of CdxMg1-xO alloys on m- and on c-plane sapphire substrates in Cd-ri
Externí odkaz:
http://arxiv.org/abs/2302.07030
Autor:
Lysak, A., Przeździecka, E., Jakiela, R., Reszka, A., Witkowski, B., Khosravizadeh, Z., Adhikari, A., Sajkowski, J. M., Kozanecki, A.
Publikováno v:
Materials Science in Semiconductor Processing (2022)
Here, we report on the characterization of {CdO/ZnO}m superlattice structures (SLs) grown by plasma assisted molecular beam epitaxy. The properties of as-grown and annealed SLs deposited on m-oriented sapphire were investigated by secondary ion mass
Externí odkaz:
http://arxiv.org/abs/2302.07016
Publikováno v:
Acta Physisca Polonica A 2023
The development of CdMgO ternary alloy with a single cubic phase is challenging but meaningful work for technological advancement. In this work, we have grown a series of Cd1-xMgxO ternary random alloys with various Mg concentrations (x = 0, 30, 32,
Externí odkaz:
http://arxiv.org/abs/2210.11785
Akademický článek
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Autor:
Lysak, A., Przeździecka, E., Jakiela, R., Reszka, A., Witkowski, B., Khosravizadeh, Z., Adhikari, A., Sajkowski, J.M., Kozanecki, A.
Publikováno v:
In Materials Science in Semiconductor Processing May 2022 142
Publikováno v:
In Ceramics International 1 October 2021 47(19):26748-26757
Autor:
Papierska, J., Ciechan, A., Bogusławski, P., Boshta, M., Gomaa, M. M., Chikoidze, E., Dumont, Y., Drabińska, A., Przybylińska, H., Gardias, A., Szczytko, J., Twardowski, A., Tokarczyk, M., Kowalski, G., Witkowski, B., Sawicki, K., Pacuski, W., Nawrocki, M., Suffczyński, J.
Publikováno v:
Phys. Rev. B 94, 224414 (2016)
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fa
Externí odkaz:
http://arxiv.org/abs/1603.01123
Autor:
Rosowska, J., Kaszewski, J., Witkowski, B., Wachnicki, Ł., Kuryliszyn-Kudelska, I., Godlewski, M.
Publikováno v:
In Optical Materials November 2020 109
Autor:
Łukasiewicz, M. I., Wójcik-Głodowska, A., Guziewicz, E., Wolska, A., Klepka, M. T., Dłużewski, P., Jakieła, R., Łusakowska, E., Kopalko, K., Paszkowicz, W., Wachnicki, Ł., Witkowski, B. S., Lisowski, W., Krawczyk, M., Sobczak, J. W., Jabłoński, A., Godlewski, M.
Publikováno v:
Semiconductor Science and Technology 27 (2012) 074009
Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-unifo
Externí odkaz:
http://arxiv.org/abs/1308.2057
Autor:
Godlewski, M., Łukasiewicz, M. I., Guziewicz, E., Ivanov, V. Yu., Owczarczyk, Ł., Witkowski, B. S.
Publikováno v:
Optical Materials 34 (2012) 2045-2049
Optical and magneto-optical properties of ZnCoO films grown at low temperature by Atomic Layer Deposition are discussed. Strong wide band absorption, with onset at about 2.4 eV, is observed in ZnCoO in addition to Co-related intra-shell transitions.
Externí odkaz:
http://arxiv.org/abs/1308.2050