Výsledky vyhledávání - "Wismayer, A. C."

Dissertation/ Thesis

Characterisation of stripe optical waveguides fabricated by silicon impurity induced disordering of GaAs/AlGaAs MQW material

Autor: Wismayer, A. C.

Impurity Induced Layer Disordering (IILD) of a GaAs/AlGaAs Multi Quantum Well (MQW) structure is known to produce a change in the refractive index dependent on the polarisation of the propagating mode. This index change can be used to provide lateral

Externí odkaz: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277893

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Conference

Optical Waveguides in GaAs/AlGaAs MQW Structures Formed by Silicon Induced Quantum Well Mixing.

Autor: Wismayer, A. C., Weiss, B. L., Roberts, J. S.

Publikováno v: MRS Online Proceedings Library; 01/14/1989, Vol. 152, pN.PAG-1, 1p

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Conference

Ion Implanted Strip Optical Waveguides in GaAs/GaAl as MQW Material.

Autor: Weiss, B. L., Wismayer, A. C.

Publikováno v: MRS Online Proceedings Library; 01/27/1988, Vol. 126, pN.PAG-1, 1p

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Akademický článek

A photoluminescence study of Si-implantation-induced mixing of GaAlAs/GaAs MQW structures for optical waveguides.

Autor: Homewood, K. P., Weiss, B. L., Wismayer, A. C., Roberts, J. S.

Publikováno v: Semiconductor Science & Technology; Jun1989, Vol. 4 Issue 6, p1-1, 1p

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Periodical

Experimental evaluation of separate contributions to ideality factor for the base surface recombination current in heterojunction bipolar transistors

Autor: Kalingamudali, S. R. D., Wismayer, A. C., Woods, R. C.

Publikováno v: Materials Science and Engineering B: Solid-State Materials for Advanced Technology; 1994, Vol. 28 Issue: 1 p238-238, 1p

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