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pro vyhledávání: '"Wisland, Dag T."'
Akademický článek
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Autor:
Moradi, Farshad, Panagopoulos, Georgios, Karakonstantis, Georgios, Farkhani, Hooman, Wisland, Dag T., Madsen, Jens K., Mahmoodi, Hamid, Roy, Kaushik
Publikováno v:
In Microelectronics Journal January 2014 45(1):23-34
Autor:
Moradi, Farshad, Vu Cao, Tuan, Vatajelu, Elena I., Peiravi, Ali, Mahmoodi, Hamid, Wisland, Dag T.
Publikováno v:
In Integration, the VLSI Journal June 2013 46(3):247-254
Autor:
Kjelgård, Kristian G., Wisland, Dag T.
Publikováno v:
Analog Integrated Circuits and Signal Processing
Autor:
Stuckenberg, Tobias, Rucker, Malte, Rother, Niklas, Nowosielski, Rochus, Wiese, Frank, Blume, Holger, Nurmi, Jari, Wisland, Dag T., Aunet, Snorre, Kjelgaard, Kristian
Publikováno v:
2021 IEEE Nordic Circuits and Systems Conference (NorCAS)
NorCAS
NorCAS
Broadband powerline communication systems using Orthogonal Frequency Division Multiplexing (OFDM) can utilize existing power lines to transmit data packets alongside power distribution. Recent standards focus towards high speed multi-media in-house s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7642e87ec7b9c2eb1f6810b954f9c77
https://www.repo.uni-hannover.de/handle/123456789/13382
https://www.repo.uni-hannover.de/handle/123456789/13382
Akademický článek
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Publikováno v:
Moradi, F, Wisland, D T, Berg, Y, Aunet, S & Cao, T V 2010, ' Process Variations in Sub-Threshold SRAM Cells ', Paper presented at International Conference on Microelectronics, Cairo, Egypt, 19/12/2010-22/12/2010 . https://doi.org/10.1109/ICM.2010.5696164
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pure_au_____::638c0cc5c04502708c5c7087b8b06533
https://pure.au.dk/portal/da/publications/process-variations-in-subthreshold-sram-cells(b7c87054-6685-4986-92f8-ced49e32f73b).html
https://pure.au.dk/portal/da/publications/process-variations-in-subthreshold-sram-cells(b7c87054-6685-4986-92f8-ced49e32f73b).html
Publikováno v:
Peiravi, Ali, , Moradi, Farshad, , Wisland, Dag T, , . Leakage Tolerant, Noise Immune domino logic for circuit design in the ultra deep sub-micron CMOS technology for haigh fan-in gates. Jo
Jo
Jo
Externí odkaz:
http://hdl.handle.net/10852/10140
https://www.duo.uio.no/bitstream/handle/10852/10140/1/art392-396.pdf
https://www.duo.uio.no/bitstream/handle/10852/10140/1/art392-396.pdf
Publikováno v:
Moradi, F, Wisland, D T, Mahmoodi, H, Peiravi, A & Tuan Vu, C 2009, ' New subthreshold concepts in 65nm CMOS technology ', Paper presented at IEEE International Symposium on Quality Electronic Design, San Jose, United States, 16/03/2009-18/03/2009 . < http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4810287 >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pure_au_____::9ea459b06b0145496481eb7baba6319a
https://pure.au.dk/portal/da/publications/new-subthreshold-concepts-in-65nm-cmos-technology(90b98e89-1088-4d37-8210-550bb9b1c224).html
https://pure.au.dk/portal/da/publications/new-subthreshold-concepts-in-65nm-cmos-technology(90b98e89-1088-4d37-8210-550bb9b1c224).html
Publikováno v:
Moradi, F, Wisland, D T, Mahmoodi, H, Aunet, S & Tuan Vu, C 2009, ' Ultra low power full adder topologies ', Paper presented at Internation symposium on circuits and systems, Taipei, Taiwan, 24/05/2009-27/05/2009 . < http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5118473 >
In this paper several low power full adder topologies are presented. The main idea of these circuits is based on the sense energy recovery full adder (SERF) design and the GDI (gate diffusion input) technique. These subthreshold circuits are employed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pure_au_____::65c4a72445bb2021302d4e19e90ecd21
https://pure.au.dk/portal/da/publications/ultra-low-power-full-adder-topologies(df44ab28-bcbd-4887-8c68-4fd1a67953af).html
https://pure.au.dk/portal/da/publications/ultra-low-power-full-adder-topologies(df44ab28-bcbd-4887-8c68-4fd1a67953af).html