Zobrazeno 1 - 10
of 428
pro vyhledávání: '"Wirtz L"'
Autor:
Schäpers, A., Sonntag, J., Valerius, L., Pestka, B., Strasdas, J., Watanabe, K., Taniguchi, T., Wirtz, L., Morgenstern, M., Beschoten, B., Dolleman, R. J., Stampfer, C.
Publikováno v:
2D Materials 9, 045009 (2022)
Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the e
Externí odkaz:
http://arxiv.org/abs/2104.06370
Autor:
Trovatello, C., Miranda, H. P. C., Molina-Sánchez, A., Varillas, R. Borrego, Manzoni, C., Moretti, L., Ganzer, L., Maiuri, M., Wang, J., Dumcenco, D., Kis, A., Wirtz, L., Marini, A., Soavi, G., Ferrari, A. C., Cerullo, G., Sangalli, D., Conte, S. Dal
Publikováno v:
ACS Nano 14, 5700 (2020)
We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We gene
Externí odkaz:
http://arxiv.org/abs/1912.12744
Autor:
Wang, Z., Molina-Sanchez, A., Altmann, P., Sangalli, D., De Fazio, D., Soavi, G., Sassi, U., Bottegoni, F., Ciccacci, F., Finazzi, M., Wirtz, L., Ferrari, A. C., Marini, A., Cerullo, G., Conte, S. Dal
In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark exciton
Externí odkaz:
http://arxiv.org/abs/1805.06259
Accurately described excitonic properties of transition metal dichalcogenide heterobilayers (HBLs) are crucial to comprehend the optical response and the charge carrier dynamics of them. Excitons in multilayer systems posses inter or intralayer chara
Externí odkaz:
http://arxiv.org/abs/1803.05483
Autor:
Sonntag, J., Reichardt, S., Wirtz, L., Beschoten, B., Katsnelson, M. I., Libisch, F., Stampfer, C.
Publikováno v:
Phys. Rev. Lett. 120, 187701 (2018)
We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magneto-phonon resonances, we extract
Externí odkaz:
http://arxiv.org/abs/1712.05648
Publikováno v:
Phys. Rev. B 92, 144107 (2015)
We revisit the well-known Mollwo-Ivey relation that describes the "universal" dependence of the absorption energies of F-type color centers on the lattice constant $a$ of the alkali-halide crystals, $E_{\mbox{abs}}\propto a^{-n}.$ We perform both sta
Externí odkaz:
http://arxiv.org/abs/1507.02209
The phonon dispersion of graphene on Ir(111) has been determined by means of angle-resolved inelastic electron scattering and density functional calculations. Kohn anomalies of the highest optical-phonon branches are observed at the $\Gamma$ and K po
Externí odkaz:
http://arxiv.org/abs/1310.6552
Publikováno v:
ACS Nano, 2013, 7 (10), pp 9249-9259
We present detailed multi frequency resonant Raman measurements of potassium graphite intercalation compounds (GICs). From a well controlled and consecutive in-situ intercalation and high temperature de-intercalation approach the response of each sta
Externí odkaz:
http://arxiv.org/abs/1307.1118
Autor:
Forster, F., Molina-Sanchez, A., Engels, S., Epping, A., Watanabe, K., Taniguchi, T., Wirtz, L., Stampfer, C.
Publikováno v:
Phys. Rev. B 88 085419 (2013)
Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points
Externí odkaz:
http://arxiv.org/abs/1212.3993
Autor:
Fromm, F., Oliveira Jr, M. H., Molina-Sánchez, A., Hundhausen, M., Lopes, J. M. J., Riechert, H., Wirtz, L., Seyller, T.
Publikováno v:
New Journal of Physics 15 (2013) 043031
We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvan
Externí odkaz:
http://arxiv.org/abs/1212.1647