Zobrazeno 1 - 3 of 3 pro vyhledávání: '"Wirtssohn, Matti R."'
1
Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe–Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe
Autor: Jost, Peter Christian Georg, Volker, Hanno, Wuttig, Matthias, Poitz, Annika, Poltorak, Christian, Zalden, Peter Erhard, Schäfer, Tobias, Lange, Felix Rolf Lutz, Schmidt, Rüdiger Matti, Holländer, Bernd, Wirtssohn, Matti R.
Publikováno v: Advanced functional materials 25(40), 6399-6406 (2015). doi:10.1002/adfm.201500848
Advanced functional materials 25(40), 6399-6406 (2015). doi:10.1002/adfm.201500848 special issue: "Special Issue: Resistively Switching Chalcogenides"
Advanced functional materials 25(40), 6399-6406 (2015). doi:10.1002/adfm.201500848 special issue: "Special Issue: Resistively Switching Chalcogenides"
Published by Wiley-VCH, Weinheim
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3753714b8d281e2b488ecc146f1f39a6
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2
Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb 2 Te 3 Alloys between Ge 3 Sb 2 Te 6 and GeTe
Autor: Jost, Peter, Volker, Hanno, Wuttig, Matthias, Poitz, Annika, Poltorak, Christian, Zalden, Peter, Schäfer, Tobias, Lange, Felix R. L., Schmidt, Rüdiger M., Holländer, Bernhard, Wirtssohn, Matti R.
Publikováno v: Advanced functional materials 25(40), 6399-6406 (2015). doi:10.1002/adfm.201500848
Disorder has a tremendous impact on charge transport in crystalline compounds on the pseudo-binary line between Sb2Te3 and GeTe. Directly after crystallization, the pronounced disorder on the cation sublattice renders crystalline Ge1Sb2Te4—a compos
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3364::f76399318b2f2564e02462f71a325b54
https://juser.fz-juelich.de/record/281807
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